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Epitaxial LaNiO3 thin films: A normal metal barrier for SNS junction

Published online by Cambridge University Press:  03 March 2011

M. S. Hegde ,
K. M. Satyalakshmi ,
R. M. Mallya ,
M. Rajeswari  and
H. Zhang
M. S. Hegde
Affiliation:
Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
K. M. Satyalakshmi
Affiliation:
Department of Metallurgy, Indian Institute of Science, Bangalore 560012, India
R. M. Mallya
Affiliation:
Department of Metallurgy, Indian Institute of Science, Bangalore 560012, India
M. Rajeswari
Affiliation:
Department of Physics, Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
H. Zhang
Affiliation:
Department of Physics, Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) films. I-V characteristics of the YBa2Cu3O7-x-LaNiO3 junction are linear, indicating ohmic contact between them.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 4 , April 1994 , pp. 898 - 902
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Tokura, Y., Taguchi, Y., Okada, Y., Fujishima, Y., Arima, T., Kumagai, K., and Lye, Y., Phys. Rev. Lett. 70, 2126 (1993).CrossRefGoogle Scholar
2Torrance, J., Lacorre, P., Nazzal, A. I., Ansaldo, E. J., and Neidermayer, Ch., Phys. Rev. B 45, 8209 (1992).CrossRefGoogle Scholar
3Wold, A., Post, B., and Banks, E., J. Am. Chem. Soc. 79, 4911 (1957).CrossRefGoogle Scholar
4Goodenough, J. B. and Raccah, P. M., J. Appl. Phys. 36, 1031 (1965).CrossRefGoogle Scholar
5Goodenough, J. B. and Longo, J. M., in Magnetic and Other Properties in Oxides and Related Compounds, edited by Hellwege, K. H. and Hellwege, A. M., Landolt-Bornstein, New Series, Group III, Vol. 4a (Springer-Verlag, Berlin, 1970), Chap. 3, p. 126.Google Scholar
6Eom, C. B., Cava, R. J., Fleming, R. M., Phillips, J. M., van Dover, R.B., Marshall, J. H., Hsu, J. W. P., Krajewski, J. J., and Peck, W. F. Jr., Science 258, 1766 (1992).CrossRefGoogle Scholar
7Wu, X. D., Foltyn, S. R., Dye, R. C., Coulter, Y., and Muenchausen, R. E., Appl. Phys. Lett. 62, 2434 (1993).CrossRefGoogle Scholar
8Satyalakshmi, K. M., Mallya, R. M., Ramanathan, K. V., Wu, X. D., Brainard, B., Gautier, D. C., Vasanthacharya, N. Y., and Hegde, M. S., Appl. Phys. Lett. 62, 1233 (1993).CrossRefGoogle Scholar
9Sagoi, M., Kinno, T., Yoshida, J., and Mizushima, K., Appl. Phys. Lett. 62, 1833 (1993).CrossRefGoogle Scholar
10Rogers, C. T., Inam, A., Hegde, M. S., Datta, B., Wu, X. D., and Venkatesan, T., Appl. Phys. Lett. 55, 2032 (1989).CrossRefGoogle Scholar
11Kevon, C., Li, Qi., Xi, X. X., Bhattacharya, S., Doughty, C., Venkatesan, T., Zang, H., Lynn, J. W., Peng, J. L., Li, Z. Y., Spencer, N. D., and Feldman, K., Appl. Phys. Lett. 62, 1289 (1993).Google Scholar
12Rajeev, K. P., Shivakumar, G. V., and Raychaudhury, A. K., Solid State Commun. 79, 591 (1991).CrossRefGoogle Scholar
13Sreedhar, K., Honig, J. M., Darvin, M., McElfresh, M., Shand, P. M., Xu, J., Crooker, B. C., and Spalek, J., Phys. Rev. B 46, 6382 (1992).CrossRefGoogle Scholar