Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-20T00:24:46.922Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth of β–SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Published online by Cambridge University Press:  31 January 2011

H. K. Woo ,
C. S. Lee ,
I. Bello  and
S. T. Lee
H. K. Woo
Affiliation:
Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong
C. S. Lee
Affiliation:
Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong
I. Bello
Affiliation:
Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong
S. T. Lee
Affiliation:
Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong
Get access

Extract

Epitaxial β–SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000 °C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β–SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β–SiC resulted.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1738 - 1740
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Davis, R. F., Palmour, J. W., and Edmond, J. A., Diamond Relat. Mater. 1, 109 (1993).CrossRefGoogle Scholar
2.Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
3.Liaw, P. and Davis, R. F., J. Electrochem. Soc. 132, 642 (1985).CrossRefGoogle Scholar
4.Powell, J. A., Larkin, D. L., Matus, L. G., Choyke, W. J., Bradshaw, J. L., Henderson, L., Yoganathan, M., Yang, J., and Pirouz, P., Appl. Phys. Lett. 56, 1442 (1990).CrossRefGoogle Scholar
5.Zorman, C. A., Fleischman, A. J., Dewa, A. S., Mehregany, M., Jacob, C., Nishino, S., and Pirouz, P., J. Appl. Phys. 78, 5136 (1995).CrossRefGoogle Scholar
6.Rimai, L., Ager, R., Logothetis, E. M., Weber, W. H., and Hangas, J., Appl. Phys. Lett. 59, 2266 (1991).CrossRefGoogle Scholar
7.Feng, Z. C., Mascarenhas, A. J., Choyke, W. J., and Powell, J. A., J. Appl. Phys. 64, 3176 (1988).CrossRefGoogle Scholar
8.Jiang, X. and Klages, C. P., Diamond Relat. Mater. 2, 1112 (1993).CrossRefGoogle Scholar
9.Stoner, B. R. and Glass, J. T., Appl. Phys. Lett. 60, 698 (1992).CrossRefGoogle Scholar