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Epitaxial growth of PbZr0.5Ti0.5O3 thin films on (001) LaAlO3 by the chemical solution deposition method

Published online by Cambridge University Press:  31 January 2011

J. H. Kim  and
F. F. Lange
J. H. Kim
Affiliation:
Department of Ceramic Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Ku, Kwangju, 500–757, South Korea
F. F. Lange
Affiliation:
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
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Abstract

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on (001) LaAlO3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)PZT‖[100](001)LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 10 , October 1999 , pp. 4004 - 4010
Copyright
Copyright © Materials Research Society 1999

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