Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-25T01:12:02.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth of C60 thin films on mica

Published online by Cambridge University Press:  31 January 2011

W. Krakow ,
N.M. Rivera ,
R.A. Roy ,
R.S. Ruoff  and
J.J. Cuomo
W. Krakow
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
N.M. Rivera
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
R.A. Roy
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
R.S. Ruoff
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
J.J. Cuomo
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
Get access

Abstract

Single crystal films of C60 of different thickness values have been deposited on mica substrates by resistance evaporation. Electron diffraction and high resolution microscopy have been used to assess the orientational ordering and the nature of the defects present in these face-centered cubic films which exhibit a 〈111〉 direction normal to the film surface.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 4 , April 1992 , pp. 784 - 787
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Kroto, H. W., Heath, J. R., O'Brien, S. C., Curl, R. F., and Smalley, R. E., Nature (London) 318, 162 (1985).Google Scholar
2.Krätschmer, W., Fostiropoulos, K., and Huffman, D. R., Chem. Phys. Lett. 170, 167 (1990).CrossRefGoogle Scholar
3.Kratschmer, W., Lamb, L. B., Fostiropoulos, K., and Huffman, D. R., Nature (London) 347, 354 (1990).Google Scholar
4.Fleming, R. M., Siegrist, T., Marsh, P. M., Hessen, B., Kortan, A. R., Murphy, D.W., Haddon, R.C., Tycko, R., Dabbagh, G., Mujsce, S. M., Kaplan, M. L., and Zahurak, S. M., Chem. Comm. (to be published).Google Scholar
5.Heiney, P. A., Fischer, J. E., McGhie, A. R., Romanow, W.J., Denenstein, A.M., McCauley, J. P., and Smith, A. B. III, Phys. Rev. Lett. 66, 2911 (1991).CrossRefGoogle Scholar
6.van Tendeloo, G., DeBeeck, M. Op, Amelinckx, S., Bohr, J., and Krätschmer, W., Europhysics Lett. 15, 295 (1991).CrossRefGoogle Scholar
7.Li, Y. Z., Patrin, J. C., Chander, M., Weaver, J. H., Chibante, L. P. F., and Smalley, R. E., Science 252, 547 and 253, 429 (1991).Google Scholar
8.Schmicker, D., Schmidt, S., Skofronick, J. G., Toennies, J. P., and Vollmer, R., submitted to Phys. Rev. B, Aug. 8, 1991.Google Scholar
9.Koma, A.et al, Nikkan Kogyo Shimbun, 8/22/91, p. 6.Google Scholar
10.Pashley, D.W., Philos. Mag. 4, 316 (1959).CrossRefGoogle Scholar
11.Cherns, D., Philos. Mag. 30, 549 (1974).CrossRefGoogle Scholar
12.Krakow, W., Thin Solid Films 93, 235 (1982).CrossRefGoogle Scholar
13.Krakow, W.et al, in preparation.Google Scholar
14.Elandsson, R., Hadziioannou, G., Mate, C. M., McClelland, G. M., and Chiang, S., J. Chem. Phys. 89, 5190 (1988).CrossRefGoogle Scholar