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Enhancing adhesion between metals or epoxy and polytetrafluoroethylene by ion assisted reaction

Published online by Cambridge University Press:  31 January 2011

S. K. Koh ,
J. W. Seok ,
S. C. Choi ,
W. K. Choi  and
H. J. Jung
S. K. Koh
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
J. W. Seok
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
S. C. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
W. K. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
H. J. Jung
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
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Abstract

Ion irradiation on polytetrafluoroethylene (PTFE) has been carried out to improve adhesions to metals and to adhesive cements. Argon ions were irradiated on the polymer, by varying the amount of Ar+ from 1 × 1014 ions/cm2 to 1 × 1017 ions/cm2 at 1 keV, and 4 ml/min of oxygen gas flowed near the polymer surface during the ion irradiation. The wetting angle of water on the PTFE surface was changed from 100° to 70–150°, depending on the ion beam condition. The changes of the wetting angle and effects of Ar+ irradiation in oxygen environment were explained by the changes in surface morphology due to the ion beam irradiation onto PTFE, and formation of a hydrophilic group due to a reaction between the irradiated polymer chain and the blown oxygen. Strongly enhanced adhesion is explained by interlock mechanism, formation of electron acceptor groups on the modified PTFE, and interfacial chemical reactions between the irradiated surface and the deposited materials.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 5 , May 1998 , pp. 1363 - 1367
Copyright
Copyright © Materials Research Society 1998

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