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Emission of partial dislocations in silicon under nanoindentation

Published online by Cambridge University Press:  22 July 2013

Qihong Fang  and
Liangchi Zhang
Qihong Fang
Affiliation:
State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, China
Liangchi Zhang*
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

This paper investigates the critical loading condition that causes the emission of dislocations in silicon subjected to nanoindentation. A theoretical model is established, which follows the deformation process that with increasing the indentation load, a phase transformation takes place, followed by partial dislocations emitting from the interface between the phase-transformed zone and the originally crystalline silicon when the indentation load reaches a critical value. In the model, the emission process represents the generation of a dipole of Shockley partial dislocations. One partial dislocation of the dipole, located at the interface, is considered immobile, whereas the other partial dislocation moves into the bulk of silicon. The effects of the indenter geometry and of the location of dislocation nucleation on the critical indentation load are discussed. The model predicts that a sharp indenter leads to a relatively smaller critical indentation load. The model prediction is verified by an indentation experiment.

Keywords

siliconnanoindentationdislocations
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 15 , 14 August 2013 , pp. 1995 - 2003
Copyright
Copyright © Materials Research Society 2013 

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