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Emanation thermal analysis in the characterization of zinc sulfide thin films prepared from different precursors

Published online by Cambridge University Press:  03 March 2011

V. Balek ,
J. Fusek ,
O. Kříž ,
M. Leskelä ,
L. Niinistö ,
E. Nykänen ,
J. Rautanen  and
P. Soininen
V. Balek
Affiliation:
Nuclear Research Institute, CS-250 68 Řež, Czech Republic
J. Fusek
Affiliation:
Nuclear Research Institute, CS-250 68 Řež, Czech Republic
O. Kříž
Affiliation:
Nuclear Research Institute, CS-250 68 Řež, Czech Republic
M. Leskelä
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
L. Niinistö*
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
E. Nykänen
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
J. Rautanen
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
P. Soininen
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
*
a)Author to whom correspondence should be addressed.
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Abstract

Zinc sulfide thin films were prepared by the Atomic Layer Epitaxy (ALE) process from zinc acetate and zinc chloride and studied by emanation thermal analysis (ETA). The effects of different precursors and growth temperatures were evident in the ETA curves. In the films grown from zinc acetate, thermally induced changes were detected below 95 °C and above 400 °C which can plausibly be attributed to a higher amount of volatiles and to a polymorphic transition, respectively. The cubic to hexagonal transition was confirmed by DSC. Doping with terbium distorts the crystal structure and causes the peaks to become poorly discernible.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 1 , January 1994 , pp. 119 - 124
Copyright
Copyright © Materials Research Society 1994

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Footnotes

b)

Permanent address: Department of Chemistry, University of Helsinki, P.O. Box 6, FIN-00014 Helsinki, Finland.

References

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