Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-17T21:23:24.176Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron microscopy of vapor phase deposited diamond

Published online by Cambridge University Press:  31 January 2011

B.E. Williams ,
H.S. Kong  and
J.T. Glass
B.E. Williams
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
H.S. Kong
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J.T. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
Get access

Abstract

Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by electron microscopy. Previously reported transmission electron microscopy (TEM) of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In this study, high resolution electron microscopy (HREM) has been utilized to lattice image individual defects in these polycrystalline diamond films. Interpretation of the images from these defects is not trivial and reported image simulations have been utilized to understand further these defects. Fivefold multiply twinned particles have also been examined and it was found that the 7.5° misfit present in such particles has been accommodated at the twin boundaries rather than by elastic deformation. This creates a twin boundary coincident with a low angle grain boundary which has been termed a “tilted twin boundary”. The density of defects in these particles is generally high; however, a dramatic reduction in the defect density near the twin boundaries was observed. This defect reduction is significant because if its origin can be determined, this information may be useful in producing higher quality diamond films.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 4 , April 1990 , pp. 801 - 810
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Williams, B. E. and Glass, J.T., Journal of Materials Research 4 (2), 373 (1989).CrossRefGoogle Scholar
2Landolt, and Börnstein, , Numerical Data and Functional Relationships in Science and Technology (Springer-Verlag, 1987).Google Scholar
3Field, J. E., Properties of Diamond (Academic Press, London, 1979).Google Scholar
4Bazhenov, V. K., Vikulin, I.M., and Gontar, A. G., Sov. Phys. Semicond. 19, 829 (1985).Google Scholar
5Derjaguin, B.V., Spitsyn, B.V., Gorodetsky, A. E., Zakharov, A. P., Bouilov, L.I., and Aleksenko, A.E., J. Cryst. Growth 31, 44 (1975).CrossRefGoogle Scholar
6Deryagin, B.V., Fedoseev, D.V., Polyanskaya, N. D., and Statenkova, E.V., Sov. Phys. Crystallogr. 21, 239 (1976).Google Scholar
7Geis, M.W., presented at The Third Annual SDIO-IST/ONR Diamond Technology Initiative Symposium, Crystal City, VA, 1988.Google Scholar
8Nakazawa, H., Kanazawa, Y., Kamo, M., and Osumi, K., Thin Solid Films 151, 199 (1987).CrossRefGoogle Scholar
9Singh, B., Arie, Y., Levine, A.W., and Mesker, O. R., Appl. Phys. Lett. 52, 451 (1988).CrossRefGoogle Scholar
10Matsumoto, S. and Matsui, Y., J. Mater. Sci. 18, 1785 (1983).CrossRefGoogle Scholar
11Sawabe, UA. and Inuzuka, T., Thin Solid Films 137, 89 (1986).CrossRefGoogle Scholar
12Matsumoto, S., J. Mater. Sci. Lett. 4, 600 (1985).CrossRefGoogle Scholar
13Sato, Y., Kamo, M., and Setaka, N., in High Tech Ceramics, edited by Vincenzini, P. (Elsevier Science Publishers, B.V., Amsterdam, 1987).Google Scholar
I4Kobashi, K., Phys. Rev. B 38, 4067 (1988).CrossRefGoogle Scholar
15Williams, B.E., Glass, J.T., Davis, R.F., Kobashi, K., and Kawate, Y., MRS Proc. (1988).Google Scholar
16Kobashi, K., Nishimura, K., Miyata, K., Kawate, Y., Glass, J.T., and Williams, B.E., SPIE Proc. (1988).Google Scholar
17Lawn, B., Kamiya, Y., and Lang, A. R., Philos. Mag. 12,177 (1965).CrossRefGoogle Scholar
18Evans, T. and Rainey, P., Proc. R. Soc. London, A 344, 111 (1975).Google Scholar
19Iijima, S, Jpn. J. Appl. Phys. 26, 365 (1987).CrossRefGoogle Scholar
20Narayan, J., Srivatsa, A. R., Peters, M., Yokota, S., and Ravi, K.V.,Appl. Phys. Lett. 53, 1823 (1988).CrossRefGoogle Scholar
21Melmed, A. J. and Hayward, D. O., J. Chem. Phys. 31, 545 (1959).CrossRefGoogle Scholar
22Peiser, H. S., Acta Cryst. 17, 774 (1964).Google Scholar
23Smith, J., Ogburn, F., and Bechtoldt, C. J., J. Electrochem. Soc. 15, 371 (1968).CrossRefGoogle Scholar
24Ino, S. and Ogawa, S., J. Phys. Soc. Jpn. 22 1365 (1967).CrossRefGoogle Scholar
25Komoda, T., Jpn. J. Appl. Phys. 7, 27 (1968).CrossRefGoogle Scholar
26Iijima, S., Jpn. J. Appl. Phys. 26, 357 (1987).CrossRefGoogle Scholar
27Narayan, J., to be published in Appl. Phys. Lett. (1989).Google Scholar
28Kern, R., Lay, G. L., and Metois, J. J., in Current Topics in Materials Science, edited by Kaldis, E. (North-Holland Publishing Company, 1979).Google Scholar
29Ino, S., J. Phys. Soc. Jpn. 27, 941 (1967).CrossRefGoogle Scholar
30Olsen, A. and Spence, J. C. H., Philos. Mag. A 43,945 (1981).CrossRefGoogle Scholar
31Hornstra, J., J. Phys. Chem. Solids 5, 129 (1958).CrossRefGoogle Scholar
32Angus, J. C., Science (1989).Google Scholar
33Clausing, R. E., Heatherly, L., More, K. L., and Begun, G. M., presented at International Conference on Metallurgical Coatings, San Diego, CA, 1989.Google Scholar
34Krivanek, O. L. and Maher, D. M., Appl. Phys. Lett. 32, 451 (1978).CrossRefGoogle Scholar
35Dahmen, U., Hetherington, C. J., Pirouz, P., and Westmacott, K. H., submitted to Scripta Metall.(1988).Google Scholar
36De Wit, R., Phys. C: Solid State Phys. 5, 529 (1972).CrossRefGoogle Scholar
37Weertman, J. and Weertman, J. R., Elementary Dislocation Theory (Macmillan, New York, 1964).Google Scholar