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Electron field emission from polycrystalline diamond films

Published online by Cambridge University Press:  31 January 2011

Qing Zhang ,
S. F. Yoon ,
J. Ahn ,
Bo Gan  and
Rusli
Qing Zhang
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
S. F. Yoon
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
J. Ahn
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
Bo Gan
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
Rusli
Affiliation:
Microelectronics Centre, Nanyang Technological University, Singapore
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Extract

The influence of the carbon network structure of polycrystalline diamond films that were prepared from a mixture of H2, CH4, and N2 using microwave-enhanced plasma chemical vapor deposition on electron field emission has been systematically investigated. With increasing nitrogen gas flow ratio of [ N2]/[H2 + CH4 + N2], the film hardness and surface roughness of the as-grown films decreased, and the concentration ratio of amorphous sp2-bonded carbon clusters and mixed sp2−sp3 carbon structures to tetrahedrally bonded amorphous carbon phases increased. Correspondingly, the turn-on voltage for electron emission decreased. After the surface post-treatment by pure hydrogen plasma exposure, the concentration ratio was clearly found to have increased dramatically and the turn-on voltage decreased significantly for the films produced at small nitrogen flow ratio. Our results suggest that the influence of the concentration ratio on electron field emission is much more significant than that of the surface roughness of the polycrystalline diamond films studied in this paper.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 212 - 217
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Himpsel, F.J., Knapp, J.A., van Van Vachten, J.A., and Eastman, D.E., Phys. Rev. B20, 624 (1979).CrossRefGoogle Scholar
2.Pate, B.B., Surf. Sci. 165, 83 (1986).CrossRefGoogle Scholar
3.van der Weider, J., Zhang, Z., Baumann, P.K., Wensell, M.G., Bernholc, J., and Nemanich, R.J., Phys. Rev. B50, 5803 (1994).CrossRefGoogle Scholar
4.Robertson, J., Diamond Relat. Mater. 5, 797 (1996).CrossRefGoogle Scholar
5.Zhirnov, V.V. and Hren, J.J., MRS Bull. 23(9), 42 (1998).CrossRefGoogle Scholar
6.Okano, K., Koizumi, S., Ravi, S., Silva, P., and Amaratunga, G.A.J, Nature 389, 140 (1996).CrossRefGoogle Scholar
7.Wang, C., Gracia, A., Igram, D.C., Lake, M., and Kerdesch, M.E., Electron, Lett. 27, 1459 (1991).CrossRefGoogle Scholar
8.Xu, N.S., Tzeng, Y., and Latham, R. V., J. Appl. Phys. 26, 1776 (1993).Google Scholar
9.Kang, W.P., Wisitsoraat, A., Davidson, J.L., and Kems, D.V., Li, Q., Xu, J.F., and Kim, C.K., J. Vac. Sci. Technol. B16, 684 (1998).CrossRefGoogle Scholar
10.Hong, Y.K., Kim, J.J., Park, C., Kim, J.S., and Kim, J.K., J. Vac. Sci. Technol. B16, 729 (1998).CrossRefGoogle Scholar
11.Zhirnov, V.V., Givargizov, E.I., and Plekhanov, P.S., J. Vac. Sci. Technol. 13, 418 (1995).CrossRefGoogle Scholar
12.Gröning, O., Küttel, O.M., Schallar, E., Gröning, P., and Schlapbach, L., Appl. Phys. Lett. 69, 476 (1996).CrossRefGoogle Scholar
13.Shirafuji, J., Sakamoto, Y., Furukawa, A., Shigeta, H., and Sugino, T., Diamond Relat. Mater. 4, 984 (1995).CrossRefGoogle Scholar
14.Sugino, T., Kawasaki, S., Yokota, Y., Iwasaki, Y., and Shirafuji, J., J. Vac. Sci. Technol. B16, 720 (1998).CrossRefGoogle Scholar
15.Badzian, A., Badzian, T., and Lee, S-T., Appl. Phys. Lett. 62, 3432 (1993).CrossRefGoogle Scholar
16.Chatei, H., Bougdira, J., Remy, M., Alnot, P., Bruch, C., and Krüger, J.K., Diamond Relat. Mater. 6, 107 (1997).CrossRefGoogle Scholar
17.Jin, S. and Moustakas, T.D., Appl. Phys. Lett. 65, 403 (1994).CrossRefGoogle Scholar
18.Zhang, Q., Yoon, S.F., Ahn, J., Rusli, , and Guo, Y.P., Microelectronics, 29, 875 (1998).CrossRefGoogle Scholar
19.Locher, R., Wild, C., Herres, N., Behr, D., and Koidl, P., Appl. Phys. Lett. 65, 34 (1994).CrossRefGoogle Scholar
20.Zhang, Q., Yoon, S.F., Ahn, J., Rusli, , Guo, Y.P., Wee, A.T.S and Huan, A.C.H, Diamond Relat. Mater. 8, 215 (1999).CrossRefGoogle Scholar
21.Wagner, J., Ramsteiner, M., Wild, Ch., and Koidl, P., Phys. Rev. B40, 1817 (1989).CrossRefGoogle Scholar
22.Marcus, B., Fayette, L., Mermoux, M., Abello, L., and Lucazeau, G., J. Appl. Phys. 76, 3463 (1994).CrossRefGoogle Scholar
23.Tuinstra, F. and Koenig, J.L., J. Chem. Phys. 53, 1126 (1970).CrossRefGoogle Scholar
24.Bharagava, S., Bist, H.D., Narlikar, A.V., Samanta, S.B., Narayan, J., and Tripathi, H.B., J. Appl. Phys. 79, 1917 (1996).CrossRefGoogle Scholar
25.Bergman, L., McClure, M.T., Glass, J.T., and Nemanich, R.J., J. Appl. Phys. 76, 3020 (1994).CrossRefGoogle Scholar
26.Wang, C.Z. and Ho, K.M., Phys. Rev. Lett. 71, 1184 (1993).CrossRefGoogle Scholar
27.Missert, N., Friedmann, T.A., Sullivan, J.P., and Copeland, R.G., Appl. Phys. Lett. 70, 1995 (1997).CrossRefGoogle Scholar
28.Satyanarayana, B.S., Hart, A., Milne, W.I., and Robertson, J., Diamond Relat. Mater. 7, 656 (1998).CrossRefGoogle Scholar
29.Huang, Z.H., Cutler, P.H., Miskovsky, N.M., and Sullivan, T.E., Appl. Phys. Lett. 65, 2562 (1994).CrossRefGoogle Scholar
30.Geis, M.W., Twichell, J.C., and Lyszczarz, T.M., J. Vac. Sci. Technol. B14, 2060 (1996).CrossRefGoogle Scholar
31.Malta, D.P., Posthill, J.B., Humphreys, T.P., Thomas, R.E., Fountain, G.G., Rudder, R.A., Hudson, G.C., Mantini, M.J., and Markunas, R.J., in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by Carter, C.H. Jr., Gildenblat, G., Nakamura, S., and Nemanich, R.J. (Mater. Res. Soc. Symp. Proc. 339, Pittsburgh, PA, 1994), p. 39.Google Scholar
32.Shih, A., Yater, J., Pehrsson, P., Butler, J., Hor, C., and Abrams, R., in Diamonds for Electronic Applications, edited by Dreifus, D.L., Collins, A., Humphreys, T., Das, K., and Pehrsson, P. (Mater. Res. Soc. Symp. Proc. 416, Pittsburgh, PA, 1996), p. 461.Google Scholar