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Electron energy-loss spectroscopy study of a multilayered SiOx and SiOxCy film prepared by plasma-enhanced chemical vapor deposition

Published online by Cambridge University Press:  01 March 2006

Zaoli Zhang*
Affiliation:
Max-Planck-Institut für Metallforschung, D-70569 Stuttgart, Germany
Thomas Wagner
Affiliation:
Max-Planck-Institut für Metallforschung, D-70569 Stuttgart, Germany
Wilfried Sigle
Affiliation:
Max-Planck-Institut für Metallforschung, D-70569 Stuttgart, Germany
Andreas Schulz
Affiliation:
Institut für Plasmaforschung, Universität Stuttgart, D-70569 Stuttgart, Germany
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

A multilayered structure of SiOx and SiOxCy on silicon substrate was prepared by plasma-enhanced chemical vapor deposition from gas mixtures of hexamethyldisiloxane and oxygen. Scanning transmission electron microscopy studies showed that the structure is well defined with distinct layers. The distributions of Si, C, and O were measured via electron energy-loss spectroscopy. We found that the elements C, Si, and O interdiffuse quite differently across the interfaces. The Si–L2,3 energy-loss near-edge structures in the SiOx and SiOxCy layers were different from those of pure Si, SiC, and Si3N4, which all contain a tetrahedral structure unit. Slight variations of the relative ratio of the first two sharp peaks at about 108 and 115 eV were found, which can probably be attributed to C partially substituting O atoms in the Si–O tetrahedral structure.

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Articles
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1.Wolfe, D.M., Lucovsky, G.: Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: Model systems for advanced device processing. J. Non-Cryst. Solids 266, 1009 (2000).CrossRefGoogle Scholar
2.Ahn, J., Kim, J., Lo, G.Q., Kwong, D-L.: Suppression of stress-induced leakage current in ultrathin N2O oxides. Appl. Phys. Lett. 60, 2809 (1992).CrossRefGoogle Scholar
3.Yasuda, T., Ma, Y., Habermehl, S., Lucovsky, G.: Low-temperature preparation of SiO2/Si(l00) interfaces using a two-step remote plasma-assisted oxidation-deposition process. Appl. Phys. Lett. 60, 434 (1992).CrossRefGoogle Scholar
4.Ishimaru, M., Sickafus, K.E.: Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. Appl. Phys. Lett. 75, 1392 (1999).CrossRefGoogle Scholar
5.Ishimaru, M., Dickerson, R.M., Sickafus, K.E.: Scanning transmission electron microscopy-energy dispersive x-ray/electron energy loss spectroscopy studies on SiC-on-insulator structures. J. Electrochem. Soc. 147, 1979 (2000).CrossRefGoogle Scholar
6.Petasch, W., Räuchle, E., Muegge, H., Muegge, K.: Duo-Plasmaline a linearly extended homogeneous low pressure plasma source. Surf. Coat. Technol. 93, 112 (1997).CrossRefGoogle Scholar
7.Kaiser, M., Baumgärtner, K-M., Schulz, A., Walker, M., Räuchle, E.: Linearly extended plasma source for large-scale applications. Surf. Coat. Technol. 116–119, 552 (1999).CrossRefGoogle Scholar
8.Strecker, A., Mayer, J., Baretzky, B., Eigenthaler, U., Gemming, T., Schweindest, R., Ruehle, M.: Optimization of TEM specimen preparation by double-sided ion beam thinning under low angles. J. Electron Microsc. (Tokyo) 48, 235 (1999).CrossRefGoogle Scholar
9.Egerton, R.F.: Electron Energy Loss Spectroscopy in the Electron Microscope, 2nd ed. (Plenum Press, New York, 1989).Google Scholar
10.Garvie, L.A.J., Buseck, P.R.: Bonding in silicates: Investigation of the Si L-2, L-3 edge by parallel electron energy-loss spectroscopy. Am. Mineral. 84, 946 (1999).CrossRefGoogle Scholar
11.Garvie, L.A., Craven, A.J., Brydson, R.: Use of electron-energy-loss near-edge fine-structure in the study of minerals. Am. Mineral. 79, 411 (1994).Google Scholar
12.Skiff, W.M., Carpenter, R.W., Lin, S.H.: Near-edge fine-structure of core-shell electronic absorption edges in silicon and its refractory compounds with the use of electron-energy-loss microspectroscopy. J. Appl. Phys. 62, 2439 (1987).CrossRefGoogle Scholar