Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T15:41:09.106Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration study in the eutectic SnBi solder joint on the Ni/Au metallization

Published online by Cambridge University Press:  01 April 2006

Long-tai Chen  and
Chih-ming Chen
Long-tai Chen
Affiliation:
Department of Chemical Engineering, National Chung-Hsing University,Taichung 402, Taiwan, Republic of China
Chih-ming Chen*
Affiliation:
Department of Chemical Engineering, National Chung-Hsing University,Taichung 402, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Microstructural evolution and interfacial reaction in the eutectic SnBi solder joint on the Ni/Au metallization with and without the current stressing of 6.5 × 103 A/cm2 at 70 °C for 5 to 15 days were investigated. Electromigration is found to have significant effects not only on the phase formation at the joint interface but also on the phase coarsening and mass accumulation of Bi in the solder. In the solder joint without the current stressing, only a thin Ni3Sn4 phase was formed at the joint interface. For the solder joint with the current stressing, in addition to the Ni3Sn4 phase, a thick Au–Ni–Bi–Sn phase was formed at the joint interface after 10 days. However, the Au–Ni–Bi–Sn phase was not observed at the anode-side joint interface after 15 days of current stressing. Coarsening of the Bi-rich grain in the solder joint with the current stressing was much faster than that without the current stressing. Mass accumulation of Bi was observed at the anode side of the solder joint with the current stressing and the thickness of the Bi-rich accumulation layer increased with current stressing time. Based on the accumulation rate of the Bi-rich layer and the growth rate of the Bi-rich grain, the product of diffusivity and effective charge number of Bi in the eutectic SnBi solder is calculated to be 4.72 × 10−10 cm2/s.

Keywords

BiElectromigrationSn
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 4 , April 2006 , pp. 962 - 969
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hua, F., Mei, Z., and Glazer, J.: Eutectic Sn–Bi as an alternative to Pb-free solders, in Proc. 48th Electronic Components and Technology Conf. (IEEE, New York, 1998), p. 277.Google Scholar
2.Ho, P.S., Kwok, T.: Electromigration in metals. Rep. Prog. Phys. 52, (3), 301 (1989).CrossRefGoogle Scholar
3.Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003).CrossRefGoogle Scholar
4.Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P., Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 (2002).CrossRefGoogle Scholar
5.Hu, Y.C., Lin, Y.H., Kao, C.R., Tu, K.N.: Electromigration failure in flip chip solder joints due to rapid dissolution of copper. J. Mater. Res. 18, 2544 (2003).CrossRefGoogle Scholar
6.Brandenburg, S. and Yeh, S.: Electromigration studies of flip chip bump solder joints. Proc. Surface Mount Int. Conf. and Exposition, SM198, San Jose, CA, Aug. 23–27 (Edina, MN: SMTA, 1998), p. 337.Google Scholar
7.Lee, T.Y., Tu, K.N., Kuo, S.M., Frear, D.R.: Electromigration of eutectic SnPb solder interconnects for flip chip technology. J. Appl. Phys. 89, 3189 (2001).CrossRefGoogle Scholar
8.Choi, J.Y., Lee, S.S., Joo, Y.C.: Electromigration behavior of eutectic SnPb solder. Jpn. J. Appl. Phys. 41, 7487 (2002).CrossRefGoogle Scholar
9.Rinne, G.A.: Issues in accelerated electromigration of solder bumps. Microelectron. Reliab. 43, 1975 (2003).CrossRefGoogle Scholar
10.Ye, H., Basaran, C., Hopkins, D.C.: Damage mechanics of microelectronics solder joints under high current densities. Int. J. Solids Struct. 40, 4021 (2003).CrossRefGoogle Scholar
11.Ye, H., Basaran, C., Hopkins, D.C.: Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under current stressing. Int. J. Solids Struct. 41, 2743 (2004).CrossRefGoogle Scholar
12.Chen, C.M., Chen, S.W.: Electromigration effect upon the Sn–0.7 wt% Cu/Ni and Sn–3.5 wt% Ag/Ni interfacial reactions. J. Appl. Phys. 90, 1208 (2001).CrossRefGoogle Scholar
13.Chen, S.W., Chen, C.M.: Electromigration effects upon interfacial reactions. JOM 55, 62 (2003).CrossRefGoogle Scholar
14.Binary Alloy Phase Diagrams, edited by Massalski, T.B. (ASM International, Materials Park, OH, 1990).Google Scholar
15.Young, B.L., Duh, J.G.: Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing. J. Electron. Mater. 30, 878 (2001).CrossRefGoogle Scholar
16.Huang, C.S., Yeh, J.H., Young, B.L., Duh, J.G.: Phenomena of electroless Ni–P and intermetallic-compound stripping and dissolving in Sn–Bi and Sn–Pb solder joints with Au/EN/Cu metallization. J. Electron. Mater. 31, 1230 (2002).CrossRefGoogle Scholar
17.Young, B.L., Duh, J.G., Jang, G.Y.: Compound formation for electroplated Ni and electroless Ni in the under-bump metallurgy with Sn-58Bi solder during aging. J. Electron. Mater. 32, (12), 1463 (2003).CrossRefGoogle Scholar
18.Luo, C.L. Master thesis, National Central University, Chungli City, Taiwan, 2000.Google Scholar
19.Tu, K.N.: Electromigration in stressed thin films. Phys. Rev. B 45, 1409 (1992).CrossRefGoogle ScholarPubMed
20.Glazer, J.: Metallurgy of low temperature Pb-free solders for electronic assembly. Int. Mater. Rev. 40, (2), 65 (1995).CrossRefGoogle Scholar