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Electrochemical synthesis of barium titanate thin films

Published online by Cambridge University Press:  31 January 2011

R. R. Bacsa*
Affiliation:
Center for Dielectric Studies, Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
G. Rutsch
Affiliation:
Center for Dielectric Studies, Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
J. P. Dougherty
Affiliation:
Center for Dielectric Studies, Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
*
a) Author to whom all correspondence may be addressed.
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Abstract

Polycrystalline films of barium titanate (BaTiO3) have been synthesized on titanium (Ti) substrates by the galvanostatic anodization of Ti in a solution of 0.4 M Ba(OH)2. Crystalline films are formed at temperatures under 100 °C within 10 min at a current density of 25 mA/cm2 at atmospheric pressure. Crystallinity of the films is found to increase with both current density and time of reaction. At 90 °C, a film of 1 μm thickness is formed after 10 min; grain sizes up to 0.5 μm are obtained. Microstructure of the films is found to be critically dependent on the pretreatment of the titanium anode. Capacitance measurements on the film yield a dielectric constant of 200 with a minimum tan delta of 0.09 at 10 kHz. On the basis of the voltage-time curves, it is interpreted that an amorphous intermediate is formed which crystallizes to form perovskite BaTiO3.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Shintani, Y. and Tada, O., J. Appl. Phys. 41, 2376 (1970).CrossRefGoogle Scholar
2.Xu, J. J., Shaikh, A. S., and Vest, R. W., IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 36 (1989).Google Scholar
3.Dosch, R. G., in Better Ceramics Through Chemistry, edited by Brinker, C. J., Clark, D. E., and Ulrich, D. R. (Mater. Res. Soc. Symp. Proc. 32, Elsevier Science Publishing, New York, 1984), p. 157.Google Scholar
4.Yoshimura, M., Yoo, S., Hayashi, M., and Ishizawa, N., Jpn. J. Appl. Phys. 28, L2007 (1990).CrossRefGoogle Scholar
5.Kajiyoshi, K., Ishizawa, N., and Yoshimura, M., J. Am. Ceram. Soc. 73, 2561 (1990).Google Scholar
6.Bacsa, R., Ravindranathan, P., and Dougherty, J.P., J. Mater. Res. 7, 423 (1992).CrossRefGoogle Scholar
7.Bendgale, P., Venigalla, S., Ambrose, J.R., Verink, E. D. Jr, and Adair, J. H., J. Am. Ceram. Soc. 76, 2619 (1993).CrossRefGoogle Scholar
8.Bacsa, R. R., Dougherty, J.P., and Pilione, L. J., Appl. Phys. Lett. 63, 1053 (1993).CrossRefGoogle Scholar
9.Bacsa, R. R., Ravindranathan, P., and Dougherty, J. P., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 431.Google Scholar
10.Arsov, L., Froelicher, M., Froment, M., and Hugot-Legoff, A., C. R. Acad. Sci. Paris Ser. C 279, 485488 (1974).Google Scholar
11.Barin, I. and Knacke, O., in Thermochemical Properties of Inorganic Substances (Springer-Verlag, Berlin/Heidelberg, New York, 1973).Google Scholar
12.Huang, S., Yee, S., Atanasoski, R. T., McMillan, C. S., Oriani, R. A., and Smyrl, W. H., J. Electrochem. Soc. 138, L63 (1991).CrossRefGoogle Scholar
13.Delplancke, J. L. and Winand, R., Electrochim. Acta 33, 1539 (1988).CrossRefGoogle Scholar
14.Delplancke, J. L. and Winand, R., Electrochim. Acta 33, 1551 (1988).CrossRefGoogle Scholar
15.Handbook of Thin Film Technology, edited by L. I. Maissel and R. Glang (McGraw-Hill, New York, 1970).Google Scholar
16.Shirn, G. I. and Burn, I., in Proc. Symp. on High Energy Density Capacitors and Dielectric Materials, edited by Reed, C. V. (National Academy Press, Washington, DC, 1981), pp. 4966.Google Scholar
17.Trotter, D. M. Jr, Sci. Am., July, 86 (1988).CrossRefGoogle Scholar