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Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

Published online by Cambridge University Press:  12 January 2017

J.H. Ngai ,
K. Ahmadi-Majlan ,
J. Moghadam ,
M. Chrysler ,
D. Kumah ,
F.J. Walker ,
C.H. Ahn ,
T. Droubay ,
Y. Du  and
S.A. Chambers
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J.H. Ngai*
Affiliation:
Department of Physics, University of Texas-Arlington, Arlington, TX 76019, USA
K. Ahmadi-Majlan
Affiliation:
Department of Physics, University of Texas-Arlington, Arlington, TX 76019, USA
J. Moghadam
Affiliation:
Department of Physics, University of Texas-Arlington, Arlington, TX 76019, USA
M. Chrysler
Affiliation:
Department of Physics, University of Texas-Arlington, Arlington, TX 76019, USA
D. Kumah
Affiliation:
Department of Applied Physics, Yale University, New Haven, CT 06511, USA; and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06511, USA
F.J. Walker
Affiliation:
Department of Applied Physics, Yale University, New Haven, CT 06511, USA; and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06511, USA
C.H. Ahn
Affiliation:
Department of Applied Physics, Yale University, New Haven, CT 06511, USA; and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06511, USA
T. Droubay
Affiliation:
Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA 99352, USA
Y. Du
Affiliation:
Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA 99352, USA
S.A. Chambers
Affiliation:
Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA 99352, USA
M. Bowden
Affiliation:
Enviromental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
X. Shen
Affiliation:
Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, NY 11973, USA
D. Su
Affiliation:
Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, NY 11973, USA
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba1−x Srx TiO3/Ge and SrZrx Ti1−x O3/Ge, will be discussed. In the case of Ba1−x Srx TiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrx Ti1−x O3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.

Keywords

oxidemolecular beam epitaxy
Type
Invited Feature Paper
Information
Journal of Materials Research , Volume 32 , Issue 2 , 27 January 2017 , pp. 249 - 259
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Copyright
Copyright © Materials Research Society 2017 

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