Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-04T21:53:38.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers

Published online by Cambridge University Press:  31 January 2011

Andre Krtschil ,
Armin Dadgar ,
Annette Diez  and
Alois Krost
Andre Krtschil*
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Armin Dadgar
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Annette Diez
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Alois Krost
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

P- and n-type conductivity domains in dual-doped ZnO:As+N layers grown by metal organic vapor phase epitaxy on GaN–sapphire templates were electrically microcharacterized by scanning capacitance microscopy (SCM) and scanning surface potential microscopy (SSPM) techniques with respect to their defect states. The p-type domains were found to be dominated by two acceptors with thermal activation energies of about 80 and 270 meV, as observed by transient SCM scans at different temperatures. Optically excited SSPM scans revealed defect-to-band transitions at 400, 459, and 505 nm omnipresent in both domain types as well as a shallower transition at 377 nm exclusively in the p-type regions. According to the similar energy levels, the optical transitions at 377 and 400 nm are assigned to acceptor states, whereby the 80-meV acceptor is probably responsible for the conversion from n- to p-type regions in the domains.

Keywords

DefectsII-VIMicrostructure
Type
Outstanding Meeting Papers
Information
Journal of Materials Research , Volume 22 , Issue 7 , July 2007 , pp. 1775 - 1778
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Butkhuzi, T.V., Bureyev, A.V., Georgobiani, A.N., Kekelidze, N.P. Khulordava, T.G.: Optical and electrical properties of radical beam gettering epitaxy grown n- and p-type ZnO single crystals. J. Cryst. Growth 117, 366 1992CrossRefGoogle Scholar
2Meyer, B.K., Sann, J., Volbers, N., Zeuner, A., Lautenschläger, S., Hoffmann, A. Haboeck, U.: Group I elements in ZnO, in Progress in Semiconductor Materials V–Novel Materials and Electronic and Optoelectronic Applications, edited by L.J. Olafsen, R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc. 891, Warrendale, PA, 2006), EE10-24.1, p. 491Google Scholar
3Park, C.H., Zhang, S.B. Wei, S-H.: Origin of p-type doping difficulty in ZnO: The impurity perspectivey. Phys. Rev. B: Condens. Matter 66, 73202 2002CrossRefGoogle Scholar
4Miao, Y., Ye, Z., Xu, W., Chen, F., Zhou, X., Zhao, B., Zhu, L. Lu, J.: p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant. Appl. Surf. Sci. 252(22), 7953 2006CrossRefGoogle Scholar
5Yamamoto, T. Katayama-Yoshida, H.: Unipolarity of ZnO with a wide-band gap and its solution using codoping method. J. Cryst. Growth 214–215, 552 2000CrossRefGoogle Scholar
6Wang, L.G. Zunger, A.: Cluster-doping approach for wide-gap semiconductors: The case of p-type ZnO. Phys. Rev. Lett. 90(25), 254601 2003Google Scholar
7Krtschil, A., Dadgar, A., Oleynik, N., Bläsing, J., Diez, A., Hempel, T., Christen, J. Krost, A.: Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic. Appl. Phys. Lett. 87, 262105 2005CrossRefGoogle Scholar
8Krtschil, A., Look, D.C., Fang, Z-Q., Dadgar, A., Diez, A. Krost, A.: Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation. Physica B 376–377, 703 2006CrossRefGoogle Scholar
9Krost, A., Christen, J., Oleynik, N., Dadgar, A., Deiter, S., Bläsing, J., Krtschil, A., Forster, D., Bertram, F. Diez, A.: Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metal organic vapour phase epitaxy. Appl. Phys. Lett. 85, 1496 2004CrossRefGoogle Scholar
10Krtschil, A., Dadgar, A. Krost, A.: Transient scanning capacitance microscopy: An approach for local electrical defect spectroscopy. J. Appl. Phys. (in preparation for submission)Google Scholar
11Krtschil, A., Dadgar, A. Krost, A.: Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy. Appl. Phys. Lett. 82(14), 2263 2003CrossRefGoogle Scholar