Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-23T17:33:02.484Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Nam-Kyeong Kim ,
Soon-Gil Yoon ,
Won-Jae Lee  and
Ho-Gi Kim
Nam-Kyeong Kim
Affiliation:
Department of Material Engineering, College of Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Soon-Gil Yoon
Affiliation:
Department of Material Engineering, College of Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Won-Jae Lee
Affiliation:
Department of Ceramic Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Ho-Gi Kim
Affiliation:
Department of Ceramic Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Get access

Abstract

The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10-8 A/cm2 at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 °C were controlled by Schottky emission with applied electric field.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 4 , April 1997 , pp. 1160 - 1164
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Shinriki, H. and Nakata, M., IEEE Trans. Electron Devices 38, 455 (1991).CrossRefGoogle Scholar
2.Yamamichi, S., Sakuma, T., Takemura, K., and Miyasaka, Y., Jpn. J. Appl. Phys. 30, 2193 (1991).CrossRefGoogle Scholar
3.Wills, L. A., Feil, W. A., Wessels, B. W., Tonge, L. M., and Marks, T. J., J. Cryst. Growth 107, 712 (1991).CrossRefGoogle Scholar
4.Feil, W. A., Wessels, B. W., Tonge, L. M., and Marks, T. J., J. Appl. Phys. 67, 3858 (1990).CrossRefGoogle Scholar
5.Liang, S., Chern, C. S., and Shi, Z. Q., Appl. Phys. Lett. 64, 3563 (1994).CrossRefGoogle Scholar
6.Wills, L. A., Wessels, B. W., Richeson, D. S., and Marks, T. J., Appl. Phys. Lett. 60, 41 (1992).CrossRefGoogle Scholar
7.Yeargan, J. R. and Taylor, H. L., J. Appl. Phys. 39, 5600 (1968).CrossRefGoogle Scholar