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Electrical and photoconductive properties of boron-doped potycrystalline diamond films

Published online by Cambridge University Press:  03 March 2011

Wenjun Zhang ,
Bo Hu ,
Erqin Xie ,
Yafei Zhang ,
Li Han ,
Zhizhong Song  and
Guanghua Chen
Wenjun Zhang
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Bo Hu
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Erqin Xie
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Yafei Zhang
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Li Han
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Zhizhong Song
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
Guanghua Chen
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
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Abstract

The current-voltage (I-V) characteristics and time-dependence photoconductivity of the undoped and B-doped diamond films (DF's) before and after annealing were investigated. The boron and hydrogen concentration in diamond films were measured by means of nuclear reaction analysis (NRA) and the elastic-recoil detection (ERD) technique, respectively. The results show that induced boron atoms and hydrogen atoms affect the electrical and photocoaductive properties of diamond films. During the annealing process, B concentration kept even, but H content decreased. For undoped diamond films, the escaping of H atoms has great effects on the electrical characteristics, but for B-doped samples, this effect decreases with the increase of B concentration.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2350 - 2354
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Fujimori, N., New Diamond 2, 10 (1986).Google Scholar
2Kamo, M. and Yurimoto, H., J. Vac. Sci. Technol. A 6, 1818 (1988).CrossRefGoogle Scholar
3Okano, K., Akiba, Y., Kurosa, T., Iida, M., and Nakamura, T., J. Cryst. Growth 99, 1192 (1990).CrossRefGoogle Scholar
4Masood, A., Asian, M., Tamor, M. A., and Potter, T. J., Appl. Phys. Lett. 61, 1832 (1992).CrossRefGoogle Scholar
5Zhang, F., Zhang, N., Xie, E., Yang, B., Yang, Y., Chen, G., and Jiang, X., Thin Solid Films 216, 279 (1992).CrossRefGoogle Scholar
6Nishimura, K., Das, K., and Glass, J.T., J. Appl. Phys. 69, 3142 (1991).CrossRefGoogle Scholar
7Mort, J., Machonkin, M., and Okumara, K., Appl. Phys. Lett. 48, 1908 (1991).CrossRefGoogle Scholar
8Zhang, F., Xie, E., Yang, B., Cai, Y., and Chen, G., Mater. Lett. 19, 115 (1994).Google Scholar
9Jeng, D. G., Tuan, H. S., Salat, R. F., and Fricano, G. J., Appl. Phys. Lett. 58, 1271 (1991).CrossRefGoogle Scholar
10Vaitkus, R., Inushima, T., and Yamazaki, S., Appl. Phys. Lett. 62, 2384 (1993).CrossRefGoogle Scholar
11Wang, Y., Liao, C., Yang, S., and Zheng, Z., Nucl. Instrum. Methods Phys. Res., Sect. B 47, 427 (1990).CrossRefGoogle Scholar
12Zhang, F., Zhang, W., Chen, M., and Chen, G., Thin Solid Films 205, 39 (1991).CrossRefGoogle Scholar
13Zhang, W., Zhang, F., Wu, Q., and Chen, G., Materials Lett. 15, 292 (1992).Google Scholar
14Photoelectronic Materials and Devices, edited by Larach, S. (Van Nostrand, New York, 1965).Google Scholar
15Bube, R. H., Photoconductivity of Solids (John Wiley, New York, 1960).Google Scholar