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Electrical and optical characterization of Sb : SnO2

Published online by Cambridge University Press:  03 March 2011

Yue-Song He ,
Joe C. Campbell ,
Robert C. Murphy ,
M.F. Arendt  and
John S. Swinnea
Yue-Song He
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78712
Joe C. Campbell
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78712
Robert C. Murphy
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78712
M.F. Arendt
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Austin, Texas 78712
John S. Swinnea
Affiliation:
Department of Materials Science and Engineering, University of Texas, Austin, Texas 78712
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Abstract

Films of Sb : SnO2 have been formed by vacuum e-beam evaporation. The structural, electrical, and optical properties of these films have been investigated with respect to annealing time and temperature. After heat treatment in an oxygen atmosphere, thin films with a peak transmittance of 98% and 4–9 × 10−3 Ωcm resistivity have been obtained. The barrier heights and energy band diagrams of Sb : SnO2/Si n-n and p-n heterojunctions have been determined by C-V measurements.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 12 , December 1993 , pp. 3131 - 3134
Copyright
Copyright © Materials Research Society 1993

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References

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