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Effects of precursor additives on the stability of plasma enhanced chemical vapor deposited a-GeC(O):H films

Published online by Cambridge University Press:  31 January 2011

A. Grill ,
S. Guilley ,
V. Patel  and
K. Babich
A. Grill
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
S. Guilley
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
V. Patel
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
K. Babich
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Germanium- and carbon-based films were deposited by plasma-enhanced chemical vapor deposition from tetramethylgermane (TMGe) with additions of oxygen, hydrogen, or argon. The index of refraction, extinction coefficient, and optical gap and Fourier transform infrared spectra of the films were measured as well as their stability in regular ambiance. It was found that the films deposited from pure TMGe were stable in time only if deposited at a negative bias above −250 V direct current. Films deposited at a bias of −150 V direct current could be stabilized by significant additions of oxygen to the plasma and complete stabilization was achieved at O2/TMGe ratios larger than 3 in the gas feed when GeOx films containing small amounts of C and H were obtained. Additions of hydrogen or argon to TMGe had only slight effects in improving the stability off the films.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 367 - 375
Copyright
Copyright © Materials Research Society 2002

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References

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