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The effects of postdeposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate

Published online by Cambridge University Press:  23 January 2013

Musa Mutlu Can ,
Tezer Fırat ,
S.Ismat Shah ,
Feray Bakan  and
Ahmet Oral
Musa Mutlu Can*
Affiliation:
Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla 34956, İstanbul, Turkey; and Nanotechnology Research and Application Center (SUNUM), Sabancı University, Tuzla 34956, İstanbul, Turkey
Tezer Fırat
Affiliation:
Department of Physics Engineering, Hacettepe University, 06800 Beytepe, Ankara, Turkey
S.Ismat Shah
Affiliation:
Department of Material Science and Engineering, Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
Feray Bakan
Affiliation:
Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla 34956, İstanbul, Turkey; and Nanotechnology Research and Application Center (SUNUM), Sabancı University, Tuzla 34956, İstanbul, Turkey
Ahmet Oral
Affiliation:
Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla 34956, İstanbul, Turkey; and Nanotechnology Research and Application Center (SUNUM), Sabancı University, Tuzla 34956, İstanbul, Turkey
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We analyze the effect of postdeposition annealing conditions on both the structure and the created defects in Zn0.90Co0.10O thin films, which deposited on the Si(100) substrates by the radio frequency magnetron sputtering technique using a homemade target. The dependence of the number and distribution of defects in homogeneously substituted Co+2 for Zn+2 ions in ZnO lattice on the annealing conditions is investigated. Orientations of thin films are in the [0002] direction with a surface roughness changing from 67 ± 2 nm to 25.8 ± 0.6 nm by annealing. The Co+2 ion substitution, changing from 7.5% ± 0.3% to 8.8 ± 0.3%, leads to the formation of Zn–O–Co bonds instead of Zn–O–Zn bonds and splitting of the Co 2p energy level to Co 2p1/2 and Co 2p3/2 with an energy difference of 15.67 ± 0.06 eV. The defects in the lattice are revealed from the correlations between Zn–O–Co bonds and intensity of the Raman peak at around 691 cm−1. In addition, the asymmetry changes of O 1s peak positions in the x-ray photoelectron spectra are in agreement with the Raman results.

Keywords

63.20.kp63.50.-x75.50.Pp78.30.FsdefectssputteringII–VI
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 5 , 14 March 2013 , pp. 708 - 715
Copyright
Copyright © Materials Research Society 2013

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