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Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films

Published online by Cambridge University Press:  09 May 2012

Ying Wang ,
Xihong Hao  and
Jinbao Xu
Ying Wang
Affiliation:
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
Xihong Hao*
Affiliation:
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
Jinbao Xu
Affiliation:
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Two-micrometer-thick Pb0.97La0.02(Zr0.98Ti0.02)O3 (PLZT) antiferroelectric films, with the addition of different PbO insert layer, were successfully fabricated on LaNiO3/Si substrates through a sol–gel method, and their microstructure and the energy storage performance were investigated in detail. X-ray diffraction curves and scanning electron microscopy images indicated that all the PLZT films showed a strong (042)-preferred orientation and had a uniform surface microstructure. The electrical measurements illustrated that the capacitive density and saturation polarization values of the thick films were improved by the PbO insert layer. As a result, PLZT thick films with 0.4‐M/L PbO‐insert layer possessed an enhanced energy storage density and energy storage efficiency, which were 25.2 J/cm3 and 52.3% measured at 984 kV/cm, respectively. Moreover, after 106 switching, the Jreco values of the corresponding films were only declined from 17.5 to 16.1 J/cm3, indicating good fatigue endurance.

Keywords

AntiferroelectricPLZTThick filmsDielectric propertiesEnergy storage
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 13 , 14 July 2012 , pp. 1770 - 1775
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1.Lu, J., Chu, J., Yang, Y., and Huang, W.: Fabrication of thick Pb(Zr, Ti)O3 (PZT) films by modified sol–gel methods for application in MEMS. Micromechatronics 2(3–4), 159–171 (2007).CrossRefGoogle Scholar
2.Chen, X., Zhang, H., Cao, F., Wang, G., Dong, X., and Gu, Y.: Charge-discharge properties of lead zirconate stannate titanate ceramics. J. Appl. Phys. 106, 034105–034105-4 (2009).Google Scholar
3.Zhang, H., Chen, X., Cao, F., Wang, G., and Dong, X.: Charge-discharge properties of an antiferroelectric ceramics capacitor under different electric fields. J. Am. Ceram. Soc. 93(12), 4015–4017 (2010).Google Scholar
4.Ma, B., Kwon, D.-K., Narayanan, M., and Balachandran, U.: Dielectric properties of PLZT film-on-foil capacitors. Mater. Lett. 62, 3573–3575 (2008).CrossRefGoogle Scholar
5.Parui, J. and Krupanidhi, S.B.: Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films. Appl. Phys. Lett. 92, 192901–192901-3 (2008).Google Scholar
6.Ye, M., Sun, Q., Chen, X., Jiang, Z., and Wang, F.: Effect of Eu doping on the electrical properties and energy storage performance of PbZrO3 antiferroelectric thin films. J. Am. Ceram. Soc. 94(10), 3234–3236 (2011).Google Scholar
7.Burn, I.: Field-enforced ferroelectricity in glass-bonded lead zirconate. Am. Ceram. Soc. Bull. 50, 501–505 (1971).Google Scholar
8.Iijima, T., Osone, S., Shimojo, Y., and Nagai, H.: Synthesis of 10-μm-thick lead zirconate titanate films on 2-in. Si substrates for piezoelectric films devices. Int. J. Appl. Ceram. Technol. 3(6), 442–447 (2006).Google Scholar
9.Wu, J., Zhu, J., Xiao, D., Zhu, J., Tan, J., and Zhang, Q.: Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin films prepared by rf magnetron sputtering with a PbOx buffer layer. J. Appl. Phys. 101, 094107–094107-5 (2007).CrossRefGoogle Scholar
10.Zhu, C., Yong, Z., Chentao, Y., and Bangchao, Y.: Investigation the effects of the excess Pb content and annealing conditions on the microstructure and ferroelectric properties of PZT(52-48) film prepared by sol-gel method. Appl. Surf. Sci. 253, 1500–1505 (2006).Google Scholar
11.Xu, B., Ye, Y., and Eric Cross, L.: Dielectric properties and field-induced phase switching of lead zirconate titanate stannate antiferroelectric thick films on silicon substrates. J. Appl. Phys. 87, 2507–2515 (2000).Google Scholar
12.Xu, B., Eric Cross, L., and Ravichandran, D.: Synthesis of lead zirconate titanate stannate antiferroelectric thick films by sol–gel processing. J. Am. Ceram. Soc. 82(2), 306–312 (1999).Google Scholar
13.Hao, X., Yue, Z., Xu, J., An, S., and Nan, C.: Energy storage performance and electrocaloric effect in (100)-preferred Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films. J. Appl. Phys. 110, 064109–064109-5 (2011).Google Scholar
14.Hao, X. and Zhai, J.: Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate. J. Cryst. Growth 310, 1137–1141 (2008).Google Scholar
15.Lanagan, M.T., Kim, J.H., Jang, S.-J., and Newnham, R.E.: Microwave dielectric properties of antiferroelectric lead zirconate. J. Am. Ceram. Soc. 71(4), 311–316 (1988).Google Scholar
16.Shirane, G. and Hoshino, S.: X-ray study of phase transitions in PbZrO3 containing Ba or Sr. Acta Crystallogr. 7, 203–210 (1954).Google Scholar
17.Brenneckal, G.L., Ihlefeld, J.F., Maria, J.-P., Tuttle, B.A., and Clem, P.G.: Processing technologies for high-permittivity thin films in capacitor applications. J. Am. Ceramic Soc. 93, 3935–3954 (2010).Google Scholar
18.Chu, B., Zhou, X., Ren, K., Neese, B., Lin, M., Wang, Q., Bauer, F., and Zhang, Q.M.: A dielectric polymer with high electric energy density and fast discharge speed. Science 313, 334–336 (2006).Google Scholar
19.Dobal, P.S., Katiyar, R.S., Bharadwaja, S.S.N., and Krupanidhi, S.B.: Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films. Appl. Phys. Lett. 78, 1730–1732 (2001).Google Scholar
20.Hao, X., Zai, J., and Yao, X.: Improved energy storage performance and fatigue endurance of Sr-doping PbZrO3 antiferroelectric thin films. J. Am. Ceram. Soc. 92(5), 1133–1135 (2009).Google Scholar