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Effects of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low-energy O+ beams

Published online by Cambridge University Press:  03 March 2011

Ryusuke Kita ,
Kenichi Kawaguchi ,
Takashi Hase ,
Takeshi Koga ,
Rittaporn Itti  and
Tadataka Morishita
Ryusuke Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Kenichi Kawaguchi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Takashi Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Takeshi Koga
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Rittaporn Itti
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Tadataka Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
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Abstract

We have studied the effects of the kinetic energy of mass-separated O+ beams on the growth of CuO thin films deposited on unheated MgO(001) and at 510 °C, in energy ranging from 10 to 200 eV by x-ray photoemission spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, and scanning electron microscopy. The films deposited at 510 °C show a full width at the half maximum (FWHM) of 0.06°for the rocking curve through the (111) peak, regardless of the kinetic energy of oxygen ions. CuO has been epitaxially grown on MgO(001) without heating it in a vacuum of 4 × 10−7 Pa. The x-ray diffraction intensity of the CuO(111) increases with an increase in the kinetic energy of O+, and its FWHM approaches that of the CuO film grown at 510 °C. The surface morphology is improved for the films deposited on unheated substrates.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 5 , May 1994 , pp. 1280 - 1283
Copyright
Copyright © Materials Research Society 1994

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References

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