Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T15:01:49.153Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low-energy O+ beams

Published online by Cambridge University Press:  03 March 2011

Ryusuke Kita ,
Kenichi Kawaguchi ,
Takashi Hase ,
Takeshi Koga ,
Rittaporn Itti  and
Tadataka Morishita
Ryusuke Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Kenichi Kawaguchi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Takashi Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Takeshi Koga
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Rittaporn Itti
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Tadataka Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135, Japan
Get access

Abstract

We have studied the effects of the kinetic energy of mass-separated O+ beams on the growth of CuO thin films deposited on unheated MgO(001) and at 510 °C, in energy ranging from 10 to 200 eV by x-ray photoemission spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, and scanning electron microscopy. The films deposited at 510 °C show a full width at the half maximum (FWHM) of 0.06°for the rocking curve through the (111) peak, regardless of the kinetic energy of oxygen ions. CuO has been epitaxially grown on MgO(001) without heating it in a vacuum of 4 × 10−7 Pa. The x-ray diffraction intensity of the CuO(111) increases with an increase in the kinetic energy of O+, and its FWHM approaches that of the CuO film grown at 510 °C. The surface morphology is improved for the films deposited on unheated substrates.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 5 , May 1994 , pp. 1280 - 1283
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Kita, R., Hase, T., Itti, R., Sasaki, M., Morishita, T., and Tanaka, S., Appl. Phys. Lett. 60, 2684 (1992).CrossRefGoogle Scholar
2Kita, R., Hase, T., Takahashi, H., Kawaguchi, K., and Morishita, T., J. Mater. Res. 8, 321 (1993).CrossRefGoogle Scholar
3Yamada, I., Inokawa, H., and Takagi, T., Nucl. Instrum. Methods Phys. Res. B 6, 439 (1985).CrossRefGoogle Scholar
4Takagi, T., Thin Solid Films 92, 1 (1982).CrossRefGoogle Scholar
5Bunsha, R. E., Thin Solid Films 80, 255 (1981).CrossRefGoogle Scholar
6Hirsh, E. H. and Varga, I. K., Thin Solid Films 52, 445 (1978).CrossRefGoogle Scholar
7Cullity, B. D., Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA, 1977), 2nd ed., Eqs. (3)–(13).Google Scholar
8Hansan, M-A., Barnell, S. A., Sundgren, J-E., and Greene, J. E., J. Vac. Sci. Technol. A 5, 1963 (1987).Google Scholar
9Shimizu, S., Sasaki, N., Ogata, S., Tsukakoshi, O., Seki, S., and Yamakawa, H., in Low Energy Ion Beam and Plasma Modification of Materials, edited by Harper, J. M. E., Miyake, K., McNeil, J. R., and Gorbatkin, S. M. (Mater. Res. Soc. Symp. Proc. 223, Pittsburgh, PA, 1991), p. 347.Google Scholar
10Marinov, M., Thin Solid Films 46, 267 (1977).CrossRefGoogle Scholar
11Yamada, I., Levenson, L. L., Usui, H., and Takagi, T., in Materials Modification and Growth Using Ion Beams, edited by Gibson, U., White, A. E., and Pranko, P. P. (Mater. Res. Soc. Symp. Proc. 93, Pittsburgh, PA, 1987), p. 253.Google Scholar
12Rabinzohn, P., Gautherin, G., Agius, B., and Cohen, C., J. Electrochem. Soc. 131, 905 (1984).CrossRefGoogle Scholar