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Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling

Published online by Cambridge University Press:  28 September 2012

Mei Liu ,
Haihui Ruan ,
Liangchi Zhang  and
Alireza Moridi
Mei Liu
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Haihui Ruan
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Liangchi Zhang*
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Alireza Moridi
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In a thin film system involving dissimilar materials, the residual stresses and microstructural defects are inevitable due to the misfits of lattice structures and thermal properties of the materials. Unfortunately, the relationship between the stresses and interface defects is still unclear to date. This article aims to clarify such an important relationship by a finite element (FE) analysis incorporating the dislocation distribution from high-resolution transmission electron microscopy. Layer removal and Raman spectroscopy were also conducted to explore the film-thickness effect. It was found that that residual stress variation in a thin film system is caused by the coupled effect of lattice-thermal misfits and discrete interfacial dislocations, that the residual stresses are dependent on the film thickness, and that it is particularly important to identify the correct density of interface dislocations for an accurate residual stress calculation by a FE analysis.

Keywords

residual stressesthin filmsRaman spectroscopytransmission electron microscopy (TEM)finite element methodsilicon-on-sapphire
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 21 , 14 November 2012 , pp. 2737 - 2745
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Hynecek, J.: Elastoresistance of N-type silicon-on-sapphire. J. Appl. Phys. 45, 2631 (1974).CrossRefGoogle Scholar
Frank, F.C. and Van-der-Merwe, J.H.: One-dimensional dislocations. 2. Misfitting monolayers and oriented overgrowth. Proc. R. Soc. London, Ser. A 198, 216 (1949).Google Scholar
People, R. and Bean, J.C.: Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures. Appl. Phys. Lett. 47, 322 (1985).CrossRefGoogle Scholar
Zhang, Y.S., Liu, L.L., and Zhang, T.Y.: Strain relaxation in heteroepitaxial films by misfit twinning: II. Equilibrium morphology. J. Appl. Phys. 101, 063502 (2007).CrossRefGoogle Scholar
Liu, L.L., Zhang, Y.S., and Zhang, T.Y.: Strain relaxation in heteroepitaxial films by misfit twinning. I. Critical thickness. J. Appl. Phys. 101, 063501 (2007).CrossRefGoogle Scholar
Matthews, J.W. and Blakeslee, A.E.: Defects in epitaxial multilayers. 1. Misfit dislocations. J. Cryst. Growth 27, 118 (1974).Google Scholar
Maree, P.M.J., Barbour, J.C., Vanderveen, J.F., Kavanagh, K.L., Bullelieuwma, C.W.T., and Viegers, M.P.A.: Generation of misfit dislocations in semiconductors. J. Appl. Phys. 62, 4413 (1987).CrossRefGoogle Scholar
Liu, M., Zhang, L.C., Brawley, A., Atanackovic, P., and Duvall, S.: Determining the complete residual stress tensors in SOS heteroepitaxial thin film systems by the technique of x-ray diffraction. Key Eng. Mater. 443, 742 (2010).CrossRefGoogle Scholar
Hamarthibault, S. and Trilhe, J.: Transmission electron observations of the early stage of epitaxial growth of silicon-on-sapphire. J. Electrochem. Soc. 128, 581 (1981).CrossRefGoogle Scholar
Batstone, J.L.: Twin intersections in silicon-on-sapphire. Philos. Mag. B 63, 1037 (1991).CrossRefGoogle Scholar
Lihl, R., Oppolzer, H., Pongratz, P., Skalicky, P., and Svanda, W.: Electron microscope study of microtwins in epitaxial silicon films on sapphire. J. Microsc. 118, 89 (1980).CrossRefGoogle Scholar
Twigg, M.E., Richmond, E.D., and Pellegrino, J.G.: Relief of compressive biaxial strains in thin films via microtwins. J. Appl. Phys. 67, 3706 (1990).CrossRefGoogle Scholar
Abrahams, M.S., Buiocchi, C.J., Corboy, J.F., and Cullen, G.W.: Misfit dislocations in heteroepitaxial Si on sapphire. Appl. Phys. Lett. 28, 275 (1976).CrossRefGoogle Scholar
Aindow, M., Batstone, J.L., Pfeiffer, L., Phillips, J.M., and Pond, R.C.: The effect of rapid thermal annealing on the dislocation structure of silicon-on-sapphire. MRS Proc. 138, 373 (1989).CrossRefGoogle Scholar
Phillips, J.M., Batstone, J.L., and Pfeiffer, L.: The effect of rapid thermal annealing on heteroepitaxial structures. in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B.-Y. (Mater. Res. Soc. Symp. Proc. 91, Pittsburgh, PA, 1987); p. 365.Google Scholar
Liu, M., Ruan, H.H., and Zhang, L.C.: Investigation of lattice mismatch stress in SOS thin film systems by Raman scattering and XRD techniques. In Proceedings of AES-ATEMA’2011 Seventh International Conference, on Advances and Trends in Engineering Materials and their Applications, Haddad, Y.M., ed, Advanced Engineering Solutions, Ottawa, Canada, 2011; p. 159.Google Scholar
Williams, K.R., Gupta, K., and Wasilik, M.: Etch rates for micromachining processing - Part II. J. Microelectromech Syst. 12, 761 (2003).CrossRefGoogle Scholar
DeWolf, I.: Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semicond. Sci. Technol. 11, 139 (1996).Google Scholar
Englert, T., Abstreiter, G., and Pontcharra, J.: Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy. Solid State Electron. 23, 31 (1980).CrossRefGoogle Scholar
Moridi, A., Ruan, H.H., Zhang, L.C., and Liu, M.: A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films. In Proceedings of AES-ATEMA’2011 Seventh International Conference, on Advances and Trends in Engineering Materials and Their Applications, Haddad, Y.M., ed, Advanced Engineering Solutions, Ottawa, Canada, 2011; p. 57.Google Scholar
Stowell, M.J.: In Epitaxial Growth, edited by Matthews, J.W. (Academic Press, New York, 1975); p. 444.Google Scholar
McKenzie, W.R., Domyo, H., Ho, T., and Munroe, P.R.: Recrystallization of amorphous silicon in the production of low defect density silicon-on-sapphire thin ?lms. Microsc. Microanal. 11(Supplement S02), 2088 (2005).CrossRefGoogle Scholar
Amano, J. and Carey, K.W.: Low-defect-density silicon-on-sapphire. J. Cryst. Growth 56, 296 (1982).CrossRefGoogle Scholar
Morin, S.A., Forticaux, A., Bierman, M.J., and Jin, S.: Screw dislocation-driven growth of two-dimensional nanoplates. Nano Lett. 11, 4449 (2011).CrossRefGoogle ScholarPubMed
Freund, L.B.: The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrate. J. Mech. Phys. Solids 38, 657 (1990).CrossRefGoogle Scholar
Hull, D. and Bacon, D.J.: Introduction to Dislocations, 3rd ed. (Pergamon, Oxford, UK, 1984).Google Scholar
Moridi, A., Ruan, H.H., Zhang, L.C., and Liu, M.: Effect of film thickness on residual stresses in silicon-on-sapphire system: Contribution of lattice mismatch and thermal mismatch. (in preparation).Google Scholar
Gutkin, M.Y. and Romanov, A.E.: Misfit dislocations in a thin two-phase heteroepitaxial plate. Phys. Status Solidi A 129, 117 (1992).CrossRefGoogle Scholar
Huang, Y. and Rosakis, A.J.: Extension of Stoney’s formula to nonuniform temperature distributions in thin film/substrate systems. The case of radial symmetry. J. Mech. Phys. Solids 53, 2483 (2005).CrossRefGoogle Scholar