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Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

Published online by Cambridge University Press:  01 December 2004

Jong-Jin Choi ,
Gun-Tae Park ,
Chee-Sung Park ,
Jae-Wung Lee  and
Hyoun-Ee Kim
Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Jae-Wung Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Keywords

FilmPiezoelectricSol-gel
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3671 - 3678
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Polla, D.L. and Francis, L.F.: Ferroelectric thin films in micro-electromechanical system applications. MRS Bull. 21, 759 (1996).Google Scholar
2Du, X., Zheng, J., Belehundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).Google Scholar
3Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L. and Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).Google Scholar
4Chen, S. and Chen, I.: Temperature-time texture transition of Pb(Zr1−x Tix )O3 thin films: I, Role of Pb-rich intermediate phase. J. Am. Ceram. Soc. 77, 2332 (1994).CrossRefGoogle Scholar
5Chen, S. and Chen, I.: Temperature-time texture transition of Pb(Zr1−xTix)O3 thin films: II, Heat treatment and compositional effects. J. Am. Ceram. Soc. 77, 2337 (1994).Google Scholar
6Kwok, C.K. and Desu, S.B.: Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process. J. Mater. Res. 8, 339 (1993).Google Scholar
7Moon, J., Kerchner, J.A., LeBleu, J., Morrone, A.A. and Adair, J.H.: Orientated lead titanate film growth at lower temperatures by the sol-gel method on particle-seeded substrates. J. Am. Ceram. Soc. 80, 2613 (1997).CrossRefGoogle Scholar
8Muralt, P., Maeder, T., Sagalowicz, L., Hiboux, S., Scalese, S., Naumovic, D., Agostino, R.G., Xanthopoulos, N., Mathieu, H.J., Patthey, L. and Bullock, E.L.: Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding. J. Appl. Phys. 83, 3835 (1998).CrossRefGoogle Scholar
9Kim, C.J., Yoon, D.S., Jiang, Z. and No, K.S.: Investigation of the drying temperature of the orientation in sol-gel processed PZT thin films. J. Mater. Sci. 32, 1213 (1997).Google Scholar
10Cheng, J. and Meng, Z.: Orientation controlling of PZT thin films derived from sol-gel techniques. J. Mater. Sci. Lett. 19, 1945 (2000).CrossRefGoogle Scholar
11Qin, H.X., Zhu, J.S., Jin, Z.Q. and Wang, Y.: PZT thin films with preferred-orientation induced by external stress. Thin Solid Films 379, 72 (2000).Google Scholar
12Meng, X.J., Cheng, J.G., Sun, J.L., Ye, H.J., Guo, S.L. and Chu, J.H.: Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films. J. Cryst. Growth 220, 100 (2002).Google Scholar
13Park, G.T., Choi, J.J., Ryu, J., Fan, H. and Kim, H.E.: Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method (SMPLM). Appl. Phys. Lett. 80, 4606 (2002).Google Scholar
14Kozuka, H. and Kajimura, M.: Single-step dip coating of crack-free BaTiO3 films >1 μm thick: Effect of poly(vinylpyrrolidone) on critical thickness. J. Am. Ceram. Soc. 83, 1056 (2000).CrossRefGoogle Scholar
15Choi, J.J., Park, C.S., Park, G.T. and Kim, H.E.: Growth of highly (100) oriented Pb(Zr,Ti)O3 thin film on silicon and glass substrates using lanthanum nitrate as a buffer layer. Appl. Phys. Lett. 85(2004).Google Scholar
16Liu, Y. and Phule, P.P.: Nucleation- or growth-controlled orientation development in chemically derived ferroelectric lead zirconate titanate (Pb(Zrx Ti1−x )O3, x = 0.4) thin films. J. Am. Ceram. Soc. 79, 495 (1996).Google Scholar
17Taylor, D.V. and Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and random crystallographic orientation. Appl. Phys. Lett. 76, 1615 (2000).Google Scholar