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Effects of different sulfurization conditions on the characterization of CuIn(SxSe1−x)2 thin films

Published online by Cambridge University Press:  14 March 2012

Fei Yan ,
Weifeng Liu ,
Guoshun Jiang ,
Xinyi Li ,
Haibin Xie  and
Changfei Zhu
Fei Yan
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Weifeng Liu*
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Guoshun Jiang
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Xinyi Li
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Haibin Xie
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Changfei Zhu*
Affiliation:
Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui 230026, People’s Republic of China; and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

In this article, single-phase CuIn(SxSe1-x)2 thin films with different x have been prepared using a new two-step method consisting of partly selenizing Cu–In precursors in Se ambient, and then exposing the partly selenized films to H2S/Ar under different conditions. The x-ray diffraction indicated that the CuIn(SxSe1-x)2 films exhibited the homogeneous chalcopyrite structure. With the increase of the sulfurization temperature from 425 to 525 °C, x increases from 0 to 1, Eg increases from 0.95 to 1.42 eV, the Raman shift of the A1[Se–Se] mode increases from 173 to 197 cm−1, and the resistivity increases from 101 to 103 Ω.cm.

Keywords

Raman spectroscopyPhase transformationPhotovoltaic
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 8 , 28 April 2012 , pp. 1112 - 1116
Copyright
Copyright © Materials Research Society 2012

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References

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