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The effect of Pb stiochiometry on switching behavior of Pt/lead zirconate titanate/Pt ferroelectric capacitors

Published online by Cambridge University Press:  31 January 2011

G. J. Norga ,
J. Maes ,
E. Coppye ,
Laura Fè ,
D. Wouters  and
O. Van der Biest
G. J. Norga*
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B3001 Leuven, Belgium
J. Maes
Affiliation:
Department of Metallurgy and Materials Engineering, KU Leuven, De Croylaan 2, B3001 Leuven, Belgium
E. Coppye
Affiliation:
Department of Metallurgy and Materials Engineering, KU Leuven, De Croylaan 2, B3001 Leuven, Belgium
Laura Fè
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B3001 Leuven, Belgium
D. Wouters
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B3001 Leuven, Belgium
O. Van der Biest
Affiliation:
Department of Metallurgy and Materials Engineering, KU Leuven, De Croylaan 2, B3001 Leuven, Belgium
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A promising approach to control Pb stoichiometry during crystallization of sol-gel-derived lead zirconate titanate (PZT) layers is presented. Pyrolyzed layers were encapsulated in a quartz ampoule containing PbZrO3 powder and crystallized in a lamp furnace. For moderate heating rates, the PbO ambient created by the powder resulted in a pronounced sharpening of the preferential (111) texture, while the remanent polarisation Pr increased by 50% compared to nonencapsulated samples. A significant reduction of the coercive field was seen for layers crystallized under PbO ambient, reflected in a lowering of the switching voltage by 0.5 V compared to standard hotplate crystallized films. The results highlighted the key role of Pb stoichiometry control for further lowering the switching voltage of PZT films.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2309 - 2313
Copyright
Copyright © Materials Research Society 2000

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References

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