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Effect of intergranular glass films on the electrical conductivity of 3Y-TZP

Published online by Cambridge University Press:  03 March 2011

M. Gödickemeier
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
B. Michel
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
A. Orliukas
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
P. Bohac
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
K. Sasaki
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
L. Gauckler
Affiliation:
Nichtmetallische Werkstoffe, ETH Zürich, CH-8092 Zürich, Switzerland
H. Heinrich
Affiliation:
Institut of Applied Physics, ETH-Zürich, CH-8093 Zürich, Switzerland
P. Schwander
Affiliation:
Institut of Applied Physics, ETH-Zürich, CH-8093 Zürich, Switzerland
G. Kostorz
Affiliation:
Institut of Applied Physics, ETH-Zürich, CH-8093 Zürich, Switzerland
H. Hofmann
Affiliation:
Alusuisse Lonza Services AG, CH-8212 Neuhausen, Switzerland
O. Frei
Affiliation:
Alusuisse Lonza Services AG, CH-8212 Neuhausen, Switzerland
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Abstract

The electrical conductivity of 3Y-TZP ceramics containing SiO2 and Al2O3 has been investigated by complex impedance spectroscopy between 500 and 1270 K. At low temperatures, the total electrical conductivity is suppressed by the grain boundary glass films. The equilibrium thickness of intergranular films is 1-2 nm, as derived using the “brick-layer” model and measured by HRTEM. A change in the slope of the conductivity Arrhenius plots occurs at the characteristic temperature Tb at which the macroscopic grain boundary resistivity has the same value as the resistivity of the grains. The temperature dependence of the conductivity is discussed in terms of a series combination of RC elements.

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Copyright © Materials Research Society 1994

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