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Effect of growth conditions on B-doped carbon nanotubes

Published online by Cambridge University Press:  03 March 2011

Sara M.C. Vieira ,
Odile Stéphan  and
David L. Carroll
Sara M.C. Vieira*
Affiliation:
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
Odile Stéphan
Affiliation:
Laboratoire de Physique des Solides, Universite Paris-Sud, 91405 Orsay, France
David L. Carroll
Affiliation:
Department of Physics, University of Wake Forest, Winston Salem, North Carolina 27109-7507
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The modified arc-discharge technique was used for the growth of boron-doped multiwalled carbon nanotubes. A variety of weight percentages of boron and sulfur were mixed (0.5–15 wt%) with graphite powder and packed in the consumable anode. Transmission electron microscopy, Raman spectroscopy, thermogravimetric analysis (TGA), and electron energy loss spectroscopy (EELS) were used to characterize the samples. EELS indicated a small percentage of boron present (<1 at.%) in the nanotubes. Sulfur was used primarily to enhance boron incorporation; however, Raman and TGA measurements indicated fewer defects and/or amorphous material present when sulfur was added.

Keywords

DopantElectron energy loss spectroscopy (EELS)Raman spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 12 , December 2006 , pp. 3058 - 3064
Copyright
Copyright © Materials Research Society 2006

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