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Effect of grain alignment on lateral carrier transport in aligned-crystalline silicon films on polycrystalline substrates

Published online by Cambridge University Press:  03 March 2011

Woong Choi
Affiliation:
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Alp T. Findikoglu*
Affiliation:
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Manuel J. Romero
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Mowafak Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
*
b) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We report the studies on the effect of grain alignment on lateral carrier transport in nominally 〈001〉-oriented aligned-crystalline silicon (ACSi) films on polycrystalline substrates. With improving grain alignment, energy barrier height at the grain boundaries was reduced from 150 to less than 1 meV, and both conductivity and Hall mobility became less sensitive to hydrogen passivation. This suggests that the dangling bonds in ACSi films are a major source of trapping sites, and that they become less dominant with improving grain alignment. These results demonstrate that improving grain alignment enhances the lateral carrier transport in small-grained (≤1 μm) polycrystalline silicon films, by reducing dangling bond density at the grain boundaries.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Brotherton, S.D.: Polycrystalline silicon thin film transistors. Semicond. Sci. Technol. 10, 721 (1995).Google Scholar
2Shah, A., Torres, P., Tscharner, R., Wyrsch, N., and Keppner, H.: Photovoltaic technology: The case for thin-film solar cells. Science 285, 692 (1999).Google Scholar
3Seto, J.Y.W.: Electrical properties of polycrystalline silicon films. J. Appl. Phys. 46, 5247 (1975).Google Scholar
4Findikoglu, A.T., Choi, W., Matias, V., Holesinger, T.G., Jia, Q.X., and Peterson, D.E.: Well-oriented silicon thin films with high carrier mobility on polycrystalline substrates. Adv. Mater. 17, 1527 (2005).Google Scholar
5Choi, W., Matias, V., Lee, J.K., and Findikoglu, A.T.: Dependence of carrier mobility on grain mosaic spread in <001>-oriented Si films grown on polycrystalline substrates. Appl. Phys. Lett. 87, 152104 (2005).Google Scholar
6Christmann, K., Ertl, G., and Pignet, T.: Adsorption of hydrogen on a Pt (111) surface. Surf. Sci. 54, 365 (1976).Google Scholar
7Kamins, T.: Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer, Boston, 1998).CrossRefGoogle Scholar
8Romero, M.J., Jiang, C.S., Noufi, R., and Al-Jassim, M.: Lateral electron transport in Cu(In,Ga)Se2 investigated by electro-assisted scanning tunneling microscopy. Appl. Phys. Lett. 87, 172106 (2005).Google Scholar
9Levinson, J., Shepherd, F.R., Scanlon, P.J., Westwood, W.D., Este, G., and Rider, M.: Conductivity behavior in polycrystalline semiconductor thin film transistors. J. Appl. Phys. 53, 1193 (1982).CrossRefGoogle Scholar
10Kazmerski, L.L., Berry, W.B., and Allen, C.W.: Role of defects in determining the electrical properties of CdS thin films. I. Grain boundaries and surfaces. J. Appl. Phys. 43, 3515 (1972).Google Scholar
11Seager, C.H.: Grain boundaries in polycrystalline silicon. Ann. Rev. Mater. Sci. 15, 271 (1985).Google Scholar
12Arora, N.D., Hauser, J.R., and Roulston, D.J.: Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE Trans. Electr. Devices ED-29, 292 (1982).CrossRefGoogle Scholar