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Effect of Electroless Copper on the Growth of ZnO Nanowires

Published online by Cambridge University Press:  03 March 2011

Wen-Ting Chiou ,
Wan-Yu Wu  and
Jyh-Ming Ting
Wen-Ting Chiou
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
Wan-Yu Wu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
Jyh-Ming Ting*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
*
a) Address correspondence to this author. e-mail: [email protected]
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Abstract

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

Keywords

NanoscalePhysical vapor deposition (PVD)Sputtering
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2348 - 2353
Copyright
Copyright © Materials Research Society 2005

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