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The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing

Published online by Cambridge University Press:  31 January 2011

C. H. Seager ,
R. A. Anderson  and
J. K. G. Panitz
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
R. A. Anderson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
J. K. G. Panitz
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Experiments are described in which hydrogen is injected into silicon by various techniques and detected by the neutralization of boron acceptor sites. Wet chemical etching is shown to inject protons several microns in a few seconds; this experiment is used to set a lower limit on the diffusivity of hydrogen of ⋍2⊠10−11 cm2/s at 300 K, a number in reasonable agreement with prior estimates deduced by Van Wieririgen and Warmholtz from high-temperature permeation measurements. A number of experiments are reported to elucidate the mechanism for “unintentional” hydrogenation occurring during argon ion bombardment. The data suggest that this effect is caused by bombardment-induced injection of hydrogen from surface H2O/hydrocarbon contaminants.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 1 , February 1987 , pp. 96 - 106
Copyright
Copyright © Materials Research Society 1987

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References

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