Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-23T06:34:11.440Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion behavior of Sn atoms in Sn58Bi solder joints under the coupling effect of thermomigration and electromigration

Published online by Cambridge University Press:  15 April 2016

Fu Guo ,
Qian Liu ,
Limin Ma  and
Yong Zuo Open the ORCID record for Yong Zuo [Opens in a new window]
Fu Guo*
Affiliation:
College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, People's Republic of China
Qian Liu*
Affiliation:
College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, People's Republic of China
Limin Ma*
Affiliation:
College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, People's Republic of China
Yong Zuo*
Affiliation:
College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, People's Republic of China
*
b)e-mail: [email protected]
c)e-mail: [email protected]
a)Address all correspondence to these authors. e-mail: [email protected]
d)e-mail: [email protected]
Get access

Abstract

Thermomigration (TM) and electromigration (EM) are two persistent reliability issues and they generally appear concurrently in solder joints. Many previous studies have attempted to understand the fundamental principles behind these phenomena with the majority of which focusing their interest into the faster migration elements in solders like Bi, Ni, or Cu. However, Sn as the slower migration element has not received that much attention. In the present study, a special linearly symmetrical structure was used. An unusual TM phenomenon of Sn atoms in the Sn58Bi solder joint was observed. The unusual TM of Sn atoms along the vertical edges was attributed to the coupled effect of the EM in the horizontal direction and the TM in vertical direction. The relationships between the microstructural characteristics and the temperature distribution were established. The results also indicated that elevated temperature and sufficient thermal gradient were the two major factors that caused TM.

Keywords

electromigrationmicroelectronicssoldering
Type
Articles
Information
Journal of Materials Research , Volume 31 , Issue 12 , 28 June 2016 , pp. 1793 - 1800
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chen, C., Tong, H.M., and Tu, K.N.: Electromigration and thermomigration in Pb-free flip-chip solder joints. Annu. Rev. Mater. Res. 40(1), 531 (2010).Google Scholar
Chen, C. and Liang, S.W.: Electromigration issues in lead-free solder joints. J. Mater. Sci.: Mater. Electron. 18(1), 259 (2006).Google Scholar
Zhang Jin-Song, W.Y-P., Yong-Guo, W., and Yuan, T.: Thermomigration in micro interconnects in integrated circuits. Acta Phys. Sin. 59(6), 4395 (2010).CrossRefGoogle Scholar
Ouyang, F.Y. and Jhu, W.C.: Comparison of thermomigration behaviors between Pb-free flip chip solder joints and microbumps in three dimensional integrated circuits: Bump height effect. J. Appl. Phys. 113(4), 8 (2013).Google Scholar
Gu, X., Yung, K.C., Chan, Y.C., and Yang, D.: Thermomigration and electromigration in Sn8Zn3Bi solder joints. J. Mater. Sci.: Mater. Electron. 22(3), 217 (2011).Google Scholar
Gu, X., Yung, K.C., and Chan, Y.C.: Thermomigration and electromigration in Sn58Bi ball grid array solder joints. J. Mater. Sci.: Mater. Electron. 21(10), 1090 (2010).Google Scholar
Gu, X. and Chan, Y.C.: Thermomigration and electromigration in Sn58Bi solder joints. J. Appl. Phys. 105(9), 5 (2009).CrossRefGoogle Scholar
Chen, H.Y. and Chen, C.: Thermomigration of Cu–Sn and Ni–Sn intermetallic compounds during electromigration in Pb-free SnAg solder joints. J. Mater. Res. 26(8), 983 (2011).Google Scholar
Guo, F., Xu, G., Sun, J., Xia, Z., Lei, Y., Shi, Y., and Li, X.: Resistance changes in eutectic Sn–Bi solder joints during electromigration. J. Electron. Mater. 38(12), 2756 (2009).Google Scholar
Chen, H-Y., Chen, C., and Tu, K-N.: Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints. Appl. Phys. Lett. 93(12), 122103 (2008).Google Scholar
Yao, W. and Basaran, C.: Computational damage mechanics of electromigration and thermomigration. J. Appl. Phys. 114(10), 12 (2013).Google Scholar
Wei, G.Q., Du, L.C., Jia, Y.P., and Qi, L.: Effect of thermomigration on evolution of interfacial intermetallic compounds in Cu/Sn/Cu and Cu/Sn0.7Cu/Cu solder joints. J. Mater. Sci.: Mater. Electron. 26(6), 4313 (2015).Google Scholar
Qu, L., Zhao, N., Ma, H.T., Zhao, H.J., and Huang, M.L.: In situ study on the effect of thermomigration on intermetallic compounds growth in liquid–solid interfacial reaction. J. Appl. Phys. 115(20), 6 (2014).CrossRefGoogle Scholar
Ouyang, F.Y. and Kao, C.L.: In situ observation of thermomigration of Sn atoms to the hot end of 96.5Sn–3Ag–0.5Cu flip chip solder joints. J. Appl. Phys. 110(12), 9 (2011).Google Scholar
Ouyang, F.Y., Jhu, W.C., and Chang, T.C.: Thermal-gradient induced abnormal Ni3Sn4 interfacial growth at cold side in Sn2.5Ag alloys for three-dimensional integrated circuits. J. Alloys Compd. 580, 114 (2013).Google Scholar
Lin, C.K., Tsao, W.A., Liang, Y.C., and Chen, C.: Temperature-dependent failure mechanism of SnAg solder joints with Cu metallization after current stressing: Experimentation and analysis. J. Appl. Phys. 114(11), 7 (2013).Google Scholar
Huang, A.T., Gusak, A., Tu, K., and Lai, Y-S.: Thermomigration in SnPb composite flip chip solder joints. Appl. Phys. Lett. 88(14), 141911 (2006).Google Scholar
Hsu, W.N. and Ouyang, F.Y.: Effects of anisotropic beta-Sn alloys on Cu diffusion under a temperature gradient. Acta Mater. 81, 141 (2014).Google Scholar
Zhang, R., Xu, G., Wang, X., Guo, F., Lee, A., and Subramanian, K.N.: Electromigration in Sn–Bi modified with polyhedral oligomeric silsesquioxane. J. Electron. Mater. 39(12), 2513 (2010).Google Scholar