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Dielectric properties of TiO2–Nb2O5 crystallographic shear structures

Published online by Cambridge University Press:  31 January 2011

R.J. Cava
Affiliation:
AT/T Bell Laboratories, Murray Hill, New Jersey 07974–3000
J. J. Krajewski
Affiliation:
AT/T Bell Laboratories, Murray Hill, New Jersey 07974–3000
W.F. Peck Jr.
Affiliation:
AT/T Bell Laboratories, Murray Hill, New Jersey 07974–3000
G. L. Roberts
Affiliation:
AT/T Bell Laboratories, Murray Hill, New Jersey 07974–3000
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Abstract

The dielectric constants (K) have been measured near ambient temperature for polycrystalline bulk ceramics of the crystallographic shear compounds TiNb24O62, Ti2Nb10O29, and TiNb2O7. These show enhanced K's over Nb2O5 and TiO2, with the 2: 10:29 phase displaying an ambient temperature K of approximately 130. We also report the effects of partial substitution of Nb by Ta. In general, the dielectric constants are enhanced for 5–10% Ta substitution, with the detailed behavior differing for the three phases.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

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