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Diamond nucleation on smooth Si3N4-coated substrate

Published online by Cambridge University Press:  31 January 2011

Ning Xu ,
Zhihao Zheng  and
Yuancheng Du
Ning Xu
Affiliation:
State Key Joint Laboratory for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433, China
Zhihao Zheng
Affiliation:
Physics Department, East China Normal University, Shanghai 200062, China
Yuancheng Du
Affiliation:
State Key Joint Laboratory for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433, China
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Abstract

Diamond was deposited on smooth Si3N4-coated Si substrates using hot-filament chemical vapor deposition (CVD). Prior to diamond deposition, the substrates were pretreated under high temperature (700–900 °C) by decomposed pure hydrogen. The experimental results show that these pregrowth processes at a substrate temperature of 850 °C enhanced the diamond nucleation on Si3N4. This indicated that decomposed hydrogen acted on the substrate to produce active centers (<100 nm), which promoted diamond nucleation. It has also been suggested that Si3N4 coating can inhibit carbon transport into the substrate, and it is beneficial to the diamond nucleation.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 12 , December 1997 , pp. 3373 - 3375
Copyright
Copyright © Materials Research Society 1997

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References

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