Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-26T12:46:32.121Z Has data issue: false hasContentIssue false

Diamond film nucleation and interface characterization

Published online by Cambridge University Press:  31 January 2011

P. Bou
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
L. Vandenbulcke
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
R. Herbin
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
F. Hillion
Affiliation:
CAMECA Courbevoie 92400, France
Get access

Abstract

A powerful micro SIMS technique coupled to a computer driven acquisition system has allowed the simultaneous recording of C, MoO, and Si images of the sample surfaces, or of the transverse cross sections of the Mo-diamond interface. Diamond deposition has been shown to take place on a Mo2C layer, and the influence on the nucleation process of Si contamination, coming from the quartz tube etched by H atoms, has been investigated. Contamination can in fact occur during the shutdown procedures or during the whole experiment. This last contamination can be avoided by using suitable pressure ranges or gas combinations. Moreover, the deposition time necessary to obtain well-crystallized diamond films and the nucleation density could be optimized by an in situ pretreatment stage. This treatment reduces the delay observed before nucleation (which would correspond to the carbide formation), and increases the carbon activity at the sample surface.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, S., J. Mater. Sci. 17, 3106 (1982).Google Scholar
2.Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. Appl. Phys. 21, 4, L183 (1982).Google Scholar
3.Sawabe, A. and Inuzuka, T., Appl. Phys. Lett. 46, 2, 146 (1982).Google Scholar
4.Bichler, R., Haubner, R., and Lux, B., Proc. 6th Euro. Conf. on CVD, edited by Porat, R. (Iscar Ltd-Nahariya, Jerusalem, 1987), p. 413.Google Scholar
5.Spitsyn, B. V., Bouilov, L. L., and Derjaguin, D. V., J. Cryst. Growth 52, 219 (1981).Google Scholar
6.Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).Google Scholar
7.Matsumoto, S., J. Mater. Sci. Lett. 4, 600 (1985).CrossRefGoogle Scholar
8.Kijima, K., Matsumoto, S., and Setaka, N., Proc. Int. Ion Engineering Congress-ISIAT and IPAT, Kyoto, edited by Takagi, T., 1417 (1983).Google Scholar
9.Messier, R., Badzian, A. R., Badzian, T., Spear, K. E., Bachman, P., and Roy, R., Thin Solid Films 153, 1 (1987).CrossRefGoogle Scholar
10.Spear, K. E., Earth and Miner. Sci. 56, 4, 53 (1987).Google Scholar
11.Kurihara, K., Sasaki, K., Kawarada, M., and Koshina, N., Appl. Phys. Lett. 52, 6, 437 (1988).CrossRefGoogle Scholar
12.Hirose, Y. and Mitsuizumi, M., New Diamond 4, 3, 34 (1988).Google Scholar
13.Yazu, S., Sato, S., and Fujimori, N., in “Diamond Optics,” edited by Feldman, A. and Holly, S., SPIE Proceedings, 969 (SPIE-Int. Soc. for Opt. Eng., Bellingham, WA, 1988).Google Scholar
14.Vandenbulcke, L., Bou, P., and Moreau, G., Proc. 1st Int. Symp. Diamond and Diamond-Like Films, edited by Dismukes, J. P., Purdes, A. J., Spear, K. E., Meyerson, B. S., Ravi, K. V., Moustakas, T. D., and Yoder, M. (The Electrochem. Soc, Pennington, NJ, 1989), p. 594; also in J. Electrochem. Soc. 138 (10), 2985 (1991).Google Scholar
15.Angus, J. C., Wang, Y., and Sunkara, M., Annu. Rev. Mater. Sci. 21, 221 (1991).CrossRefGoogle Scholar
16.Bou, P., Vandenbulcke, L., and Herbin, R., Diamond Relat. Mater, (to be published).Google Scholar
17.Slodzian, G., Boust, F., Daigne, B., Girard, F., and Hillion, F., The 2nd European Conference on Advanced Materials and Processes, EUROMAT 91, University of Cambridge, July 1991 (to be published).Google Scholar
18.Slodzian, G., Daigne, B., Girard, F., Boust, F., and Hillion, F., “Comptes Rendus de l'Academie des Sciences, Paris,” t. 311, Serie II, 5764 (1990).Google Scholar
19.Mucha, J. A., Flamm, D. L., and Ibbotson, D. E., J. Appl. Phys. 65 (9), 3448 (1989).Google Scholar
20.Bou, P., Boettner, J. C., and Vandenbulcke, L., Jpn. J. Appl. Phys. 31, 5 (1992).Google Scholar
21.Belton, D. N., Harris, S. J., Schmieg, S. J., Weiner, A. M., and Perry, T. A., Appl. Phys. Lett. 54, 5, 416 (1989).CrossRefGoogle Scholar
22.Singh, B., Arie, Y., Levine, A. W., and Mesker, O. R., Appl. Phys. Lett. 52 (6), 451 (1988).Google Scholar
23.Wood, R. W., Philos. Mag. 42, 729 (1921).Google Scholar
24.Wood, R. W., Philos. Mag. 44, 541 (1922).Google Scholar
25.Nishimura, K., Kobashi, K., Kawate, Y., and Horiuchi, T., KOBELCO Tech. Rev. [2], 4952 (Aug 1987).Google Scholar
26.Badzian, A. R., Badzian, T., Roy, R., Messier, R., and Spear, K. E., Mater. Res. Bull. XXIII, 531 (1988).Google Scholar
27.Saito, Y., Sato, K., Matuda, S., and Koinuma, H., J. Mater. Sci. 26, 24412444 (1991).Google Scholar
28.Williams, B. E. and Glass, J. T., J. Mater. Res. 4, 373 (1989).CrossRefGoogle Scholar
29.Joffreau, P. O., Haubner, R., and Lux, B., J. Ref. Hard Metals, 186, (Dec. 1988).Google Scholar
30.Joffreau, P. O., Haubner, R., and Lux, B., MRS Spring Meet., April 59, Reno, NV (1988).Google Scholar
31.Ong, T. P. and Chang, R. P. H., Appl. Phys. Lett. 58 (4), 358 (1991).CrossRefGoogle Scholar
32.Bichler, R., Peng, J., Haubner, R., and Lux, B., 3rd Int. Conf. on the Sci. of Hard Mater., 8–13 Nov. 1987, Nassau.Google Scholar
33.Bachmann, P. K., Weimer, R., Drawl, W., Liou, Y., and Messier, R., Proc. of the Diamond Technology Initiative Symposium, T20 (1988).Google Scholar
34.Mitsuda, Y., Yoshida, T., and Akashi, K., ISPC-8 Proc. 4, 24692474 (1987).Google Scholar
35.Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63 (5), 1744 (1988).CrossRefGoogle Scholar
36.Hirabayashi, K., Taniguchi, Y., Takamatsu, O., Ikeda, T., Ikoma, K., and Iwasaki-Kurihara, N., Appl. Phys. Lett. 53 (19), 1815 (1988).Google Scholar
37.Ma, J. S., Kawarada, H., Yonehara, T., Suzuki, J., Wei, J., Yokata, Y., and Hiraki, A., Appl. Phys. Lett. 55, 11, 1971 (1989).Google Scholar