Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-26T05:56:53.610Z Has data issue: false hasContentIssue false

Determination of equilibrium cations for the KTiOPO4 structure

Published online by Cambridge University Press:  31 January 2011

Valery I. Chani
Affiliation:
Institute for Materials Research, Tohoku University, 2–1-1 Katahira, Aoba-ku, Sendai-shi, 980, Japan
Kiyoshi Shimamura
Affiliation:
Institute for Materials Research, Tohoku University, 2–1-1 Katahira, Aoba-ku, Sendai-shi, 980, Japan
Tsuguo Fukuda
Affiliation:
Institute for Materials Research, Tohoku University, 2–1-1 Katahira, Aoba-ku, Sendai-shi, 980, Japan
Get access

Abstract

Single crystals with the structure of KTiOPO4 (KTP) were grown from mixtures containing equal concentrations of KSnOPO4 and KGeOPO4 (i), KTiOPO4 and KGeOPO4 (ii), and KTiOPO4 and KTiOAsO4 (iii), respectively. The comparison of the lattice parameters measured and calculated from Vegard's rule shows that structural stability of KTiOAsO4 is higher in comparison with KTiOPO4. It was found that addition of GeO2 to the KTP containing flux is accompanied by increasing all lattice parameters of KTP that correspond to substitution of As5+ by Ge4+.

Type
Articles
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Tordjman, I., Masse, R., and Guitel, J. G., Z. Kristallogr. 139, 103 (1974).CrossRefGoogle Scholar
2.Ballman, A. A., Brown, H., Olson, D. H., and Rice, C. E., J. Cryst. Growth 75, 390 (1986).CrossRefGoogle Scholar
3.Voronkova, V. I. and Vanovskii, V. K., Inorg. Mater. 24, 205 (1988).Google Scholar
4.Bierlin, J. D., Vanherzeele, H., and Ballman, A. A., Appl. Phys. Lett. 54, 783 (1989).CrossRefGoogle Scholar
5.Bolt, R. J., de Haas, H., Sebastian, M. T., and Klapper, H., J. Cryst. Growth 110, 587 (1991).CrossRefGoogle Scholar
6.Cheng, L. K., Bierlin, J. D., and Ballman, A. A., J. Cryst. Growth 110, 657 (1991).CrossRefGoogle Scholar
7.Cheng, L. K., Bierlin, J. D., Foris, C. M., and Ballman, A. A., J. Cryst. Growth 112, 309 (1991).CrossRefGoogle Scholar
8.Furusava, S., Yanagisawa, H., and Ishibashi, Y., J. Phys. Soc. Jpn. 62, 4152 (1993).CrossRefGoogle Scholar
9.Haussühl, S., Luping, S., Baolin, W., Jiyang, W., Liebertz, J., Wostrack, A., and Ch. Fink, Cryst. Res. Technol. 29, 583 (1994).CrossRefGoogle Scholar
10.Voronkova, V. I., Yanovskii, V. K., Lee, D. Y., Sorokina, N. I., Verin, I. A., Furmanova, N. G., and Simonov, V. I., Crystallogr. Rep. 39, 374 (1994).Google Scholar
11.Loiacono, G. M., Loiacono, D. N., and Stolzenberger, R. A., J. Cryst. Growth 144, 223 (1994).CrossRefGoogle Scholar
12.Cheng, L. K., McCarron, E. M. III, Calabrese, J., Bierlin, J. D., and Ballman, A. A., J. Cryst. Growth 132, 280 (1993).CrossRefGoogle Scholar
13.Cheng, L. K., Cheng, L. T., Galperin, J., Hotsenpiller, P. A. Morris, and Bierlin, J. D., J. Cryst. Growth 137, 107 (1994).CrossRefGoogle Scholar
14.Chani, V. I., Shimamura, K., Inoue, K., and Fukuda, T., Jpn. J. Appl. Phys. 32, 4669 (1993).CrossRefGoogle Scholar
15.Chani, V. I., Inoue, K., Shimamura, K., and Fukuda, T., J. Mater. Res. 9, 3028 (1994).CrossRefGoogle Scholar
16.Chani, V. I., Proc. SPIE 1125, Thin Films in Optics, 107 (1989).CrossRefGoogle Scholar
17.Vegard, L., Z. Physik 5, 17 (1921).CrossRefGoogle Scholar
18.Kanno, Y., Pagnoux, C., Piffard, Y., and Tournoux, M., J. Mater. Res. 6, 2499 (1991).CrossRefGoogle Scholar