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Determination of band gap in polycrystalline Si/Ge thin film multilayers

Published online by Cambridge University Press:  01 March 2006

S. Tripathi*
Affiliation:
University Grant Commission–Department of Atomic Energy Consortium for Scientific Research, University Campus, Indore-452017, India
R. Brajpuriya
Affiliation:
University Grant Commission–Department of Atomic Energy Consortium for Scientific Research, University Campus, Indore-452017, India
C. Mukharjee
Affiliation:
Centre for Advanced Technology (CAT), Indore–452013, India
S.M. Chaudhari
Affiliation:
University Grant Commission-Department of Atomic Energy Consortium for Scientific Research, University Campus, Indore–452017, India
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The valence band (VB) photoemission supported by ultraviolet–visible–near infrared spectroscopy techniques were used to determine the band gap values of polycrystalline Si and Ge single layers as well as of Si/Ge multilayer structures. The band gap values obtained from VB photoemission measurements for these structures were found to be much larger than their corresponding bulks and to match well with those determined from standard optical absorption measurements. In each case, the VB offset values were obtained by considering the corresponding VB maximum as a reference. The increase in band gap in case of thin single layers of Si and Ge with respect to bulks were interpreted in terms of quantum confinement effect, while in case of multilayer sample, the effect of various factors such as (i) intermixing leading to the formation of SiGe alloy, (ii) roughness at the interface, (iii) particle size, and (iv) strain seem to play an important role in the observed change in band gap.

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Articles
Copyright
Copyright © Materials Research Society 2006

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References

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