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Deposition of Epitaxial Titanium Carbide Films on MgO(001) and 6H–SiC(0001) by Coevaporation of Ti and C60

Published online by Cambridge University Press:  31 January 2011

Lars Norin ,
Jun Lu ,
Ulf Jansson  and
Jan-Olle Malm
Lars Norin
Affiliation:
Ångström Laboratory, Department of Inorganic Chemistry, Uppsala University, P.O. Box 538, S-751 21 Uppsala, Sweden
Jun Lu
Affiliation:
Ångström Laboratory, Department of Inorganic Chemistry, Uppsala University, P.O. Box 538, S-751 21 Uppsala, Sweden
Ulf Jansson
Affiliation:
Ångström Laboratory, Department of Inorganic Chemistry, Uppsala University, P.O. Box 538, S-751 21 Uppsala, Sweden
Jan-Olle Malm
Affiliation:
National Center of HREM, Department of Inorganic Chemistry 2, Lund University, P.O. Box 124, S-221 00, Lund, Sweden
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Abstract

Epitaxial films of TiC1-x (0.15 < x < 0.50) were deposited on MgO(001) and 6H–SiC(0001) at 250 and 400 °C by coevaporation of C60 and Ti. Films deposited on MgO(001) were single-crystalline down to deposition temperatures of at least 250 °C as determined by x-`ray diffraction (XRD), low energy electron diffraction (LEED), and transmission electron microscopy (TEM). Films deposited on 6H–SiC(0001) were also epitaxial at 250 °C, but TEM showed a columnar microstructure due to the occurrence of twinned domains in the [111] growth direction normal to the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1589 - 1596
Copyright
Copyright © Materials Research Society 1999

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References

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