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Deposition of crystal polythiophene thin films by KrF excimer laser ablation

Published online by Cambridge University Press:  31 January 2011

Y. F. Lu*
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Z. M. Ren
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Z. H. Mai
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
T. C. Chong
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
S. C. Ng
Affiliation:
Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
P. Miao
Affiliation:
Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
B. A. Cheong
Affiliation:
Data Storage Institute, 10 Kent Ridge Crescent, Singapore 119260
S. K. Chow
Affiliation:
Data Storage Institute, 10 Kent Ridge Crescent, Singapore 119260
T. Y. F. Liew
Affiliation:
Data Storage Institute, 10 Kent Ridge Crescent, Singapore 119260
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Abstract

Thin films of polythiophene, a kind of polyheterocyclic compound with hydrogen function groups, were deposited by KrF excimer laser ablation of a compressed solid target in a vacuum chamber. The laser pulse fluence was approximately selected at 2 J/cm2 with a pulse duration of 25 ns. The structural, topographic, and electronic properties of the deposited thin films were analyzed by atomic force microscope, x-ray diffraction, and Raman and infrared spectroscopy measurements. Deposited thin films were observed to have good crystal properties and to be composed of crystalline cubes with a uniform size of 0.1 μm. The electronic structure of the deposited thin films should be different from the target materials, resulting from the laser irradiation effects. The influence of the deposition temperature on the structural and electronic properties of the deposited thin films was studied.

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Articles
Copyright
Copyright © Materials Research Society 2000

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