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Deposition and characterization of YBa2Cu3O7−δ/LaMnO3/MgO/TiN heterostructures on Cu metal substrates for development of coated conductors

Published online by Cambridge University Press:  03 March 2011

C. Cantoni ,
D. K. Christen ,
M. Varela ,
J. R. Thompson ,
S. J. Pennycook ,
E. D. Specht  and
A. Goyal
C. Cantoni
Affiliation:
Oak Ridge National Laboratory–Condensed Matter Science Division, Oak Ridge, Tennessee 37831
D. K. Christen
Affiliation:
Oak Ridge National Laboratory–Condensed Matter Science Division, Oak Ridge, Tennessee 37831
M. Varela
Affiliation:
Oak Ridge National Laboratory–Condensed Matter Science Division, Oak Ridge, Tennessee 37831
J. R. Thompson
Affiliation:
Oak Ridge National Laboratory–Condensed Matter Science Division, Oak Ridge, Tennessee 37831 and Department of Physics, University of Tennessee, Knoxville, Tennesse 37996–1200
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory–Condensed Matter Science Division, Oak Ridge, Tennessee 37831
E. D. Specht
Affiliation:
Oak Ridge National Laboratory–Metals and Ceramics Division, Oak Ridge, Tennessee 37831
A. Goyal
Affiliation:
Oak Ridge National Laboratory–Metals and Ceramics Division, Oak Ridge, Tennessee 37831
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Abstract

In this paper a novel buffer layer architecture consisting of LaMnO3/MgO/TiN is proposed as a suitable structural and chemical template for the epitaxial growth of high-transition temperature (Tc) superconductors on Cu metal surfaces. Using techniques such as high-energy electron diffraction and scanning transmission electron microscopy, we present in situ and ex situ analyses of the buffer-layer and superconductor growth with focus on structural properties of the interfaces formed. While MgO is a good barrier to oxygen diffusion, we find that MgO alone is not a suitable buffer layer due to rapid Cu diffusion. Further, growth of MgO with a single epitaxy can be hindered by the presence of impurities such as S, which form strongly bonded superstructures on the metal surface. With the addition of a TiN layer as a barrier to Cu diffusion, oxide formation is suppressed, interfaces are clean, and a single cube-on-cube epitaxy is observed. While the Cu/TiN and TiN/MgO interfaces are rough, the MgO and LaMnO3 layers planarize the material, leading to growth of smooth YBa2Cu3O7−δ (YBCO). Residual strain in the YBCO film is 0.25% or less and does not lead to apparent cracking. The superconducting properties of the samples were investigated by electrical transport and magnetization measurements. For the first time, high critical current density (Jc) values are reported for YBCO films grown on (001) single-crystal and 100‹100›?textured Cu surfaces without intervening metal coatings. Jc on single crystal-like substrates is as high as 3.5 MA/cm2. Reduced Jc of approximately 1 MA/cm2 on rolled Cu tapes is limited by damage to the tape surface during the rolling process.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 10 , October 2003 , pp. 2387 - 2400
Copyright
Copyright © Materials Research Society 2003

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