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The dependence of heavy-ion-induced adhesion on energy loss and time

Published online by Cambridge University Press:  31 January 2011

R.G. Stokstad ,
P.M. Jacobs ,
I. Tserruya ,
L. Sapir  and
G. Mamane
R.G. Stokstad
Affiliation:
Department of Nuclear Physics, Weizmann Institute of Science, Rehovot, Israel and Nuclear Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
P.M. Jacobs
Affiliation:
Department of Nuclear Physics, Weizmann Institute of Science, Rehovot, Israel
I. Tserruya
Affiliation:
Department of Nuclear Physics, Weizmann Institute of Science, Rehovot, Israel
L. Sapir
Affiliation:
Department of Nuclear Physics, Weizmann Institute of Science, Rehovot, Israel
G. Mamane
Affiliation:
Department of Nuclear Physics, Weizmann Institute of Science, Rehovot, Israel
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Abstract

The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th (cm−2) = 1017 (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV mg−1 cm−2) of the ion in Au. For the Au-Si system, Dth = 6×1018 (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 231 - 233
Copyright
Copyright © Materials Research Society 1986

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