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Dependence of fracture toughness on annealing temperature in Pb(Zr0.52Ti0.48)O3 thin films produced by metal organic decomposition

Published online by Cambridge University Press:  31 January 2011

X. J. Zheng ,
Y. C. Zhou  and
H. Zhong
X. J. Zheng*
Affiliation:
Institute of Fundamental Mechanics and Material Engineering, Xiangtan University, Hunan, 411105, People's Republic of China
Y. C. Zhou
Affiliation:
Institute of Fundamental Mechanics and Material Engineering, Xiangtan University, Hunan, 411105, People's Republic of China
H. Zhong
Affiliation:
Department of Civil Engineering, Tsinghua University, Beijing 100084, People's Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on Pt/Ti/Si(001) by metal organic decomposition (MOD). The effects of the annealing procedure on the crystalline microstructure, hysteresis loops, and fracture toughness of PZT thin films were investigated by x-ray diffraction, RT66A analyzer, and Vickers indentation method, respectively. It was found that the fracture toughness, crystalline microstructure, and ferroelectric properties depend on the annealing procedure. When the annealing temperature is in the range of 600–750 °C, the higher the annealing temperature, the better the crystalline quality. The fracture pattern diagram, as a function of indentation load and annealing temperature, was introduced to describe the fracture characteristics of PZT thin film induced by indentation load. With the increase of annealing temperature from 600 °C to 750 °C, the fracture toughness of PZT thin films decreased from 0.492 MPa m1/2 to 0.478 MPa m1/2.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 3 , March 2003 , pp. 578 - 584
Copyright
Copyright © Materials Research Society 2003

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