Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T03:20:12.353Z Has data issue: false hasContentIssue false

Densification kinetics of glass films constrained on rigid substrates

Published online by Cambridge University Press:  03 March 2011

Jaecheol Bang
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Guo-Quan Lu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Get access

Abstract

The kinetics of constrained-film sintering were studied in a borosilicate glass (BSG) + silica system because of their applications in microelectronic packaging technologies. Samples with a silica content by 20% by volume were prepared from slurries of powder mixtures in a commercial polyvinyl butyral (PVB) binder solution. Constrained films about 0.2 mm thick were formed by doctor-blade casting the slurries on silicon wafers. Free-standing films about 0.6 mm thick were also produced by casting the slurries on a treated mylar sheet for easy lift-off. Sintering experiments were carried out in a hot stage at temperatures between 715 °C and 775 °C. Shrinkage profiles of the free and constrained (shrinkage in thickness only) films were determined in situ using a custom-designed optical system. The densification rates measured in the constrained films were slower than those in the free films. However, the substrate constraint had no effect on the activation energy of densification which was found equal to 385 ± 10 kJ/mol, the same for both free and constrained films. A relation between the constrained-film and free-film densification profiles was derived using the viscous analogy for the constitutive equations of a porous sintering body.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tummala, R. R., in Microelectronics Packaging Handbook, edited by Tummala, R. R. and Rymaszewaki, E. J. (Van Nostrand Rein-hold, New York, 1989).Google Scholar
2Kingery, W. D., Bowen, H. K., and Uhlmann, D. R., Introduction to Ceramics, 2nd ed. (John Wiley & Sons, New York, 1976), p. 448.Google Scholar
3Lu, G-Q., Sutterlin, R. C., and Gupta, T. K., J. Am. Ceram. Soc. 76, 1907 (1993).CrossRefGoogle Scholar
4Sutterlin, R. C., Lu, G-Q., and Gupta, T. K., Ceram. Trans. 33, 435 (1993).Google Scholar
5Hsueh, C. H., Scripta Metall. 19, 1213 (1985).CrossRefGoogle Scholar
6Bordia, R. K. and Raj, R., J. Am. Ceram. Soc. 68, 287 (1985).CrossRefGoogle Scholar
7Garino, T. J. and Bowen, H. K., J. Am. Ceram. Soc. 73, 251 (1990).CrossRefGoogle Scholar
8Scherer, G. W., J. Am. Ceram. Soc. 60, 236 (1977).CrossRefGoogle Scholar
9Jean, J-H. and Gupta, T. K., J. Mater. Res. 9, 486 (1994).CrossRefGoogle Scholar
10Scherer, G. W., J. Non-Cryst. Solids 34, 239 (1979).CrossRefGoogle Scholar
11Sura, V. M. and Panda, P. C., J. Am. Ceram. Soc. 73, 2697 (1990).CrossRefGoogle Scholar
12Rahaman, M. N. and De Jonghe, L. C., J. Am. Ceram. Soc. 73, 707 (1990).CrossRefGoogle Scholar
13Bordia, R. K. and Scherer, G. W., Acta Metall. 36, 2393 (1988).CrossRefGoogle Scholar
14Bordia, R. K. and Scherer, G. W., Acta Metall. 36, 2399 (1988).CrossRefGoogle Scholar
15Skorokhod, V. V., Poroshk. Metall. 2, 14 (1961).Google Scholar
16Mackenzie, J. K. and Shuttleworth, R., Proc. Phys. Soc. London 62, 833 (1949).CrossRefGoogle Scholar
17Mackenzie, J. K., Proc. Phys. Soc. London, Sect. B 63, 2 (1950).CrossRefGoogle Scholar