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Degradation of organic field-effect transistors made of pentacene

Published online by Cambridge University Press:  03 March 2011

Ch. Pannemann ,
T. Diekmann  and
U. Hilleringmann
Ch. Pannemann*
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
T. Diekmann
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
U. Hilleringmann
Affiliation:
University of Paderborn, Department of Electrical Engineering EIM-E, Warburger Str. 100, D-33098 Paderborn, Germany
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

Keywords

AgingOrganicSemiconductor
Type
Articles—Organic Electronics Special Section
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 1999 - 2002
Copyright
Copyright © Materials Research Society 2004

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References

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