Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T13:12:58.340Z Has data issue: false hasContentIssue false
  • English
  • Français

CVD Si3N4 on single crystal SiC: Part I. Characterization and orientation relationship at the interface

Published online by Cambridge University Press:  29 June 2016

O. Unal ,
J. J. Petrovic  and
T. E. Mitchell
O. Unal
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. J. Petrovic
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T. E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Get access

Abstract

Si3N4 deposited by CVD on the surface of single crystal SiC was studied by SEM, x-ray diffraction, and TEM techniques. Characterization of the thick Si3N4 deposit was made by SEM and x-ray diffraction. The main emphasis, however, was on the analysis of the Si3N4/SiC interface and this analysis was carried out by electron diffraction studies in TEM. Both x-ray diffraction and TEM studies revealed that the CVD Si3N4 deposit has almost entirely the α-form except for occasional large β crystals. The structure of the SiC substrate in the interior was 6H but the surface structure close to the interface was always microtwinned β. Diffraction studies of the bulk Si3N4 deposit showed not only the presence of preferred growth directions but also different growth orientations near the substrate interface. TEM investigations at the interface also revealed that preferred growth orientations at the Si3N4/SiC interface are different from those in the bulk. The prominent orientation relationship at the interface is [0001]Si3N4//[101]SiC; Si3N4//SiC; a second one, namely Si3N4//[101]SiC; Si3N4//SiC relationship was also occasionally observed. Microindentation tests at the interface indicated that the Si3N4/SiC interface bonding is strong at ambient temperatures but weakens at high temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 136 - 147
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Lange, F. F., Int. Metall. Rev. 1, 1 (1980).Google Scholar
2.Ziegler, G., Heinrich, J., and Wotting, G., J. Mater. Sci. 22, 3041 (1981).Google Scholar
3.Yamada, T., Shimada, M., and Koizumi, M., Ceram. Bull. 60, 1281 (1981).Google Scholar
4.Hirai, T. and Hayashi, S., J. Mater. Sci. 17, 1320 (1982).Google Scholar
5.Gebhardt, J.J., Tanzilli, R.A., and Harris, T.A., J. Electrochem. Soc. 123, 1578 (1976).Google Scholar
6.Hirai, T. and Hayashi, S., J. Am. Ceram. Soc. 64, C–88 (1981).Google Scholar
7.Oda, K., Yoshio, T., and O-Oka, K., J. Am. Ceram. Soc. 66, C–8 (1983).CrossRefGoogle Scholar
8.Shaw, T. M., Steeds, J. W., and Clarke, D. R., in Electron Microscopy of Materials, edited by Krakow, W. K., Smith, D. A., and Hobbs, L. W. (Mater. Res. Soc. Symp. Proc. 31, Pittsburgh, PA, 1984), p. 325.Google Scholar
9.Morosanu, C. E., Thin Solid Films 65, 171 (1980).CrossRefGoogle Scholar
10.Niihara, K. and Hirai, T., J. Mater. Sci. 11, 604 (1976).Google Scholar
11.Niihara, K. and Hirai, T., J. Mater. Sci. 11, 593 (1976).CrossRefGoogle Scholar
12.Niihara, K. and Hirai, T., J. Mater. Sci. 12, 1233 (1977).Google Scholar
13.Niihara, K. and Hirai, T., J. Mater. Sci. 12, 1243 (1977).Google Scholar
14.Unal, O. and Mitchell, T.E., submitted to J. Mater. Res. (1991).Google Scholar
15.Knippenberg, W. F. and Verspui, G., Silicon Carbide-73, edited by Marshall, R. C., Faust, J. W., and Ryan, C. E. (Univ. of S. Carolina Press, 1974), p. 108.Google Scholar
16. Microdev Software, P.O. Box 2302, Evergreen, CO 80439.Google Scholar
17.Verma, A. R. and Krishna, P., Polymorphism and Polytypism in Crystals (John Wiley, New York, 1966).Google Scholar
18.Ogbuji, L.U., Mitchell, T.E., and Heuer, A.H., J. Am. Ceram. Soc. 64, 91 (1981).Google Scholar
19.De Veirman, A., Broddin, D., Van Landuyt, J., Skorupa, W., and Voelskow, M., in High Resolution Electron Microscopy of Defects in Materials, edited by Sinclair, R., Smith, D. J., and Dahmen, U. (Mater Res. Soc. Symp. Proc. 183, Pittsburgh, PA, 1990), p. 147.Google Scholar
20.Keyes, R.W., Proc. Conf. Silicon Carbide (Pergamon Press, Boston, MA, 1969), p. 271.Google Scholar
21.Galasso, F., Kuntz, U., and Croft, W.J., J. Am. Ceram. Soc. 55, 431 (1972).Google Scholar