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Cu precipitation in oxidized wafers with and without a GexSi1−x heteroepitaxial layer

Published online by Cambridge University Press:  31 January 2011

G. Kissinger ,
G. Morgenstern  and
H. Richter
G. Kissinger
Affiliation:
Institut für Halbleiterphysik Frankfurt (Oder), Walter-Korsing-Straβe 2, O-1200, Germany
G. Morgenstern
Affiliation:
Institut für Halbleiterphysik Frankfurt (Oder), Walter-Korsing-Straβe 2, O-1200, Germany
H. Richter
Affiliation:
Institut für Halbleiterphysik Frankfurt (Oder), Walter-Korsing-Straβe 2, O-1200, Germany
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Abstract

Copper silicide precipitation in Czochralski silicon influenced by the existence of a GexSi1−x heteroepitaxial layer has been studied. Samples with and without a 100 nm Ge0.016Si0.984 heteroepitaxial layer were annealed together for different periods of time at 1000 °C in air on copper containing iron plate and after copper plating of the backside, respectively. The absorption or emission of silicon self-interstitials (or vacancies) significantly influences the precipitation behavior of copper silicide. Undersaturation of silicon self-interstitials (or vacancy supersaturation) during oxidation of the heteroepitaxial layers is able to prevent the formation of copper silicide precipitate colonies in the surface region.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 8 , August 1993 , pp. 1900 - 1907
Copyright
Copyright © Materials Research Society 1993

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References

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