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Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

Published online by Cambridge University Press:  26 March 2013

Leonardus B. Bayu Aji ,
S. Ruffell ,
B. Haberl ,
J.E. Bradby  and
J.S. Williams
Leonardus B. Bayu Aji*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia
S. Ruffell
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia
B. Haberl
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia
J.E. Bradby
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100% at a temperature of 340 °C, a temperature well before the temperature where the average bond-angle distortion is fully minimized. This suggests that multiple processes are occurring during full relaxation.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 8 , 28 April 2013 , pp. 1056 - 1060
Copyright
Copyright © Materials Research Society 2013

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References

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