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Comparative study of the effect of H2 addition on ZnO films grown by different zinc and oxygen precursors

Published online by Cambridge University Press:  16 April 2015

Haoyuan Mao ,
Shulin Gu ,
Jiandong Ye ,
Kun Tang ,
Ran Gu ,
Shunming Zhu ,
Shimin Huang ,
Zhengrong Yao  and
Youdou Zheng
Haoyuan Mao
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Shulin Gu*
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Jiandong Ye
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Kun Tang*
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Ran Gu*
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Shunming Zhu
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Shimin Huang
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Zhengrong Yao
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Youdou Zheng
Affiliation:
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

In this study, the authors have comparatively studied the influence of H2 addition on the structures and properties of ZnO films grown by metal organic (MO) chemical vapor deposition with dimethyl zinc and diethyl zinc as zinc precursors and N2O and O2 as oxygen sources, respectively. Various characterization methods, like x-ray diffraction, Raman scattering, Hall effect, photoluminescence, and atomic force microscopy, have been utilized, showing that H2 has different effects on different MO precursors and oxidants. The H2 addition has significantly improved the crystal structural quality of ZnO thin films for the case of dimethyl zinc source, but an opposite effect has been found for the case of diethyl zinc. Moreover, the H2 addition can significantly improve the optical properties of the ZnO films, regardless of the zinc MO sources used, with the surface morphology improved too. The suppression of carbon-related contaminations depends on the use of different precursors and whether H2 is added. By analyzing the experimental results, we have given the effects of H2 on the decomposition of the discussed MO precursors and oxidants, the proposed mechanism could be used in understanding the experimental data.

Keywords

ZnOH2MOCVDDEZnDMZnN2O
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 7 , 14 April 2015 , pp. 935 - 945
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Zhu, P., Tang, Z.K., and Wong, G.K.L.: Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature. Solid State Commun. 103, 459 (1997).Google Scholar
Bagnall, D.M., Chen, Y.F., Zhu, Z., Yao, T., Koyama, S., Shen, M.Y., and Goto, T.: Optically pumped lasing of ZnO at room temperature. Appl. Phys. Lett. 70, 2230 (1997).CrossRefGoogle Scholar
Ye, J.D., Gu, S.L., Zhu, S.M., Liu, S.M., Liu, W., Zhou, X., Hu, L.Q., Zhang, R., Shi, Y., and Zheng, Y.D.: Comparative study of diethylzinc and dimethylzinc for the growth of ZnO. J. Cryst. Growth 274, 489 (2005).CrossRefGoogle Scholar
Oleynik, N., Adam, M., Krtschil, A., Blasing, J., Dadgar, A., Bertram, F., Forster, D., Diez, A., Greiling, A., Seip, M., Christen, J., and Krost, A.: Metalorganic chemical vapor phase deposition of ZnO with different O-precursors. J. Cryst. Growth 248, 14 (2003).CrossRefGoogle Scholar
Lamb, D.A. and Irvine, S.J.C.: Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor. J. Cryst. Growth 273, 111 (2004).CrossRefGoogle Scholar
Lau, C.K., Tiku, S.K., and Lakin, K.M.: Growth of epitaxial ZnO thin films by organometallic chemical vapor deposition. J. Electrochem. Soc. 127, 1843 (1980).CrossRefGoogle Scholar
Oda, S., Tokunaga, H., Kitajima, N., Hanna, J., Shimuzu, I., and Kodado, H.: Highly oriented ZnO films prepared by MOCVD from diethylzinc and alcohols. Jpn. J. Appl. Phys. 24, 1607 (1985).CrossRefGoogle Scholar
Roy, V.A.L., Djurisic, A.B., Chan, W.K., Gao, J., Lui, H.F., and Surya, C.: Luminescent and structural properties of ZnO nanorods prepared under different conditions. Appl. Phys. Lett. 83, 141 (2003).CrossRefGoogle Scholar
Leung, C.Y., Djurišić, A.B., Leung, Y.H., Ding, L., Yang, C.L., and Ge, W.K.: Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires. J. Cryst. Growth 290, 131 (2006).CrossRefGoogle Scholar
Marzouki, A., Sayari, A., Jomard, F., Sallet, V., Lusson, A., and Oueslati, M.: Carrier gas and VI/II ratio effects on carbon clusters incorporation into ZnO films grown by MOCVD. Mater. Sci. Semicond. Process. 16, 1022 (2013).CrossRefGoogle Scholar
Park, J.H., Byun, D., Jeon, B.J., and Lee, J.K.: Effect of hydrogen content on the ZnO thin films on the surface of polyethylene terephthalate substrate through electron cyclotron resonance-metal organic chemical vapor deposition. J. Mater. Sci. 43, 3471 (2008).CrossRefGoogle Scholar
Baik, S.J., Jang, J.H., Lee, C.H., Cho, W.Y., and Lim, K.S.: Highly textured and conductive undoped ZnO film using hydrogen post-treatment. Appl. Phys. Lett. 70, 3516 (1997).CrossRefGoogle Scholar
Myong, S.Y. and Lim, K.S.: Highly stable and textured hydrogenated ZnO thin films. Appl. Phys. Lett. 82, 3026 (2003).CrossRefGoogle Scholar
Myong, S.Y. and Lim, K.S.: Alternate deposition and hydrogen doping technique for ZnO thin films. J. Cryst. Growth 293, 253 (2006).CrossRefGoogle Scholar
Zhu, G.Y., Gu, S.L., Zhu, S.M., Huang, S.M., Gu, R., Ye, J.D., and Zheng, Y.D.: Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate. J. Cryst. Growth 349, 6 (2012).CrossRefGoogle Scholar
Tang, K., Gu, S.L., Zhu, S.M., Liu, J.G., Chen, H., Ye, J.D., Zhang, R., and Zheng, Y.D.: Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO. Appl. Phys. Lett. 95, 192106 (2009).CrossRefGoogle Scholar
Sun, W.H., Wang, S.T., Zhang, J.C., Chen, K.M., Qin, G.G., Tong, Y.Z., Yang, Z.J., Zhang, G.Y., Pu, Y.M., Zhang, Q.L., Li, J., Lin, J.Y., and Jiang, H.X.: Formation and dissolution of microcrystalline graphite in carbon-implanted GaN. J. Appl. Phys. 88, 5662 (2000).CrossRefGoogle Scholar
Marzouki, A., Lusson, A., Jomard, F., Sayari, A., Galtier, P., Oueslati, M., and Sallet, V.: SIMS and Raman characterizations of ZnO: N thin films grown by MOCVD. J. Cryst. Growth 312, 3063 (2010).CrossRefGoogle Scholar
Liu, J.G., Gu, S.L., Zhu, S.M., Tang, K., Liu, X.D., Chen, H., and Zheng, Y.D.: The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition. J. Cryst. Growth 312, 2710 (2010).CrossRefGoogle Scholar
Avella, M., Prieto, A.C., Jimenez, J., Rodriguez, A., Sangrador, J., Rodriguez, T., Ortiz, M.I., and Ballesteros, C.: Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2. Mater. Sci. Eng., B 147, 200 (2008).CrossRefGoogle Scholar
Tang, K., Gu, S.L., Zhu, S.M., Liu, W., Ye, J.D., Zhu, J.M., Zhang, R., Zheng, Y.D., and Sun, X.W.: Carbon clusters in N-doped ZnO by metal-organic chemical vapor deposition. Appl. Phys. Lett. 93, 132107 (2008).CrossRefGoogle Scholar
Kobayashi, N. and Makimoto, T.: Reduced carbon contamination in OMVPE grown GaAs and AlGaAs. Jpn. J. Appl. Phys. 24, 824 (1985).CrossRefGoogle Scholar
Rueter, M.A. and Vohs, J.M.: Adsorption and reaction of diethylzinc on GaAs(100). J. Vac. Sci. Technol., B 10, 2163 (1992).CrossRefGoogle Scholar
Klivényi, G., Kovács, I., and Solymosi, F.: Thermal and photo-induced dissociation of (C2H5)2Zn on Rh(111) surface. Surf. Sci. 442, 115 (1999).CrossRefGoogle Scholar