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A comparative study of a new microscale technique and conventional bending techniques for evaluating the interface adhesion strength in IC metallization systems

Published online by Cambridge University Press:  31 January 2011

Shoji Kamiya ,
Hiroshi Shimomura ,
Masaki Omiya  and
Takashi Suzuki
Shoji Kamiya
Affiliation:
Nagoya Institute of Technology, Department of Mechanical Engineering, Aichi 466-8555, Nagoya, Japan; and JST CREST, Chiyoda-ku, Tokyo 102-0075, Japan
Hiroshi Shimomura
Affiliation:
Nagoya Institute of Technology, Department of Mechanical Engineering, Aichi 466-8555, Nagoya, Japan
Masaki Omiya*
Affiliation:
Keio University, Department of Mechanical Engineering, Kohoku-ku Yokohama, Kanagawa 223-8522, Japan; and JST CREST, Chiyoda-ku, Tokyo 102-0075, Japan
Takashi Suzuki
Affiliation:
Fujitsu Laboratories Ltd., Kanagawa 243-0197, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We developed a new microscale technique for evaluating the local interface adhesion in a thin film stack and we compared it with a conventional four-point bending technique. Using the microscale technique, the interface adhesion was estimated to be 3.0 J/m2 by comparing experimental results with numerical simulation results for interface crack propagation behavior. The four-point bending technique was applied to the same interface and the interface adhesion was estimated to be 4.4 J/m2 by experiment. However, this value is an overestimate because it includes the plastic deformation of epoxy resin used to fabricate the specimens. By eliminating the additional energy dissipated through plastic deformation of the epoxy resin close to the interface crack tip, the interface adhesion was evaluated to be 3.3 J/m2. This value agrees well with that obtained using the microscale technique.

Keywords

AdhesionCuMicroelectronics
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1917 - 1928
Copyright
Copyright © Materials Research Society 2010

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