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Commonalties of the influence of lower valent A-site and B-site modifications on lead zirconate titanate ferroelectrics and antiferroelectrics

Published online by Cambridge University Press:  31 January 2011

Qi Tan ,
Z. Xu  and
Dwight Viehland
Qi Tan
Affiliation:
Department of Materials Science and Engineering, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Z. Xu
Affiliation:
Department of Materials Science and Engineering, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Dwight Viehland
Affiliation:
Department of Materials Science and Engineering, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

Studies of the structure-property relations of lead zirconate titanate (PZT) modified with lower valent substitutions on the A- and B-sites have been performed as a function of substituent concentration. These investigations have yielded common changes induced by these substitutions on ferroelectric phases. The commonalties are the presence of fine domains and polarization pinning effects. Differences in domain morphologies were observed between the rhombohedral and tetragonal ferroelectric phases. Rhombohedral ferroelectrics were found to exhibit “wavy” domain patterns with increasing dopant concentrations, whereas a lenticular domain shape was preserved as the domain size was decreased for tetragonal ferroelectrics. These differences were explained in terms of different pinning mechanisms based on the differences in local elastic strain accommodations. Investigations of high Zr-content PZT have revealed that the ferroelectric rhombohedral phase becomes stabilized over the antiferroelectric orthorhombic with increasing concentrations of lower valent modifications. This change was explained in terms of the enhanced coupling between oxygen octahedra due to the bonding of oxygen-vacancy dipoles.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 465 - 475
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Kulcsar, F., J. Am. Ceram. Soc. 42, 49 (1959).CrossRefGoogle Scholar
2.Kulcsar, F., J. Am. Ceram. Soc. 42, 343 (1959).CrossRefGoogle Scholar
3.Takahashi, S. and Takahashi, M., Jpn. J. Appl. Phys. 11, 31 (1972).CrossRefGoogle Scholar
4.Gerson, R., J. Appl. Phys. 31, 188 (1960).CrossRefGoogle Scholar
5.Postnikov, V. S., Pavlov, V. S., and Turkov, S. K., J. Phys. Chem. Solids 31, 1785 (1970).CrossRefGoogle Scholar
6.Carl, K. and Hardtl, K., Ferroelectrics 17, 473 (1978).CrossRefGoogle Scholar
7.Dimos, D., Warren, W. L., Sinclair, M. B., Tuttle, B. A., and Schwartz, R. W., J. Appl. Phys. 76, 4305 (1994).CrossRefGoogle Scholar
8.Warren, W. L. and Dimos, D., Appl. Phys. Lett. 64, 866 (1994).CrossRefGoogle Scholar
9.Dimos, D., Al-Shareef, H. N., Warren, W. L., and Tuttle, B. A., J. Appl. Phys. 80, 1682 (1996).Google Scholar
10.Hartling, G., Bull. Am. Ceram. Soc. 73, 93 (1994).Google Scholar
11.Uchino, K., Proc. 1st European Conf. on Smart Structures and Materials, Glasgow, 1992.Google Scholar
12.Cross, L. E., J. Intelligent Materials Systems and Structures 6, 55 (1995).CrossRefGoogle Scholar
13.Tan, Q., Xu, Z. K., Li, J-F., and Viehland, D., J. Appl. Phys. 80, 5866 (1996).CrossRefGoogle Scholar
14.Tan, Q., Li, J-F., and Viehland, D., Philos. Mag. B 76, 59 (1996).CrossRefGoogle Scholar
15.Tan, Q., Xu, Z., Li, J-F., and Viehland, D., Appl. Phys. Lett. 71, 1062 (1997).CrossRefGoogle Scholar
16.Griffiths, C. R. and Russell, R., J. Am. Ceram. Soc. 55, 110 (1972).CrossRefGoogle Scholar
17.Johker, G. H., J. Am. Ceram. Soc. 55, 53 (1972).Google Scholar
18.Dederichs, H. and Arlt, G., Ferroelectrics 68, 281 (1986).CrossRefGoogle Scholar
19.Arlt, G. and Neumann, H., Ferroelectrics 87, 109 (1988).CrossRefGoogle Scholar
20.Robels, U., Schneider-Strormann, L., and Arlt, G., Ferroelectrics 168, 301 (1995).Google Scholar
21.Dai, X., Xu, Z., and Viehland, D., J. Appl. Phys. 77, 5088 (1995).Google Scholar
22.Fujii, Y., Hoshino, S., Yamada, Y., and Shirane, G., Phys. Rev. B 9, 4549 (1974).CrossRefGoogle Scholar
23.Xu, Z., Dai, X., Li, J-F., and Viehland, D., Appl. Phys. Lett. 66, 2963 (1995).CrossRefGoogle Scholar
24.Viehland, D., Xu, Z., and Payne, D. A., J. Appl. Phys. 74, 7454 (1993).CrossRefGoogle Scholar
25.Mitsui, T., Tatsuzaki, I., and Nakamura, E., in An Introduction to the Physics of Ferroelectrics (Gordon and Breach Science Publishers, New York, 1976), p. 197.Google Scholar
26.Tan, Q. and Viehland, D., J. Am. Ceram. Soc. 81, 328 (1998).CrossRefGoogle Scholar
27.Parlinski, K., Watanabe, Y., Ohno, K., and Kawazoe, Y., J. Mater. Res. 10, 1864 (1995).CrossRefGoogle Scholar