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Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

Published online by Cambridge University Press:  03 March 2011

L.M. Porter ,
R.F. Davis ,
J.S. Bow ,
M.J. Kim  and
R.W. Carpenter
L.M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J.S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
M.J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
R.W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
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Abstract

Thin films (4-1000 Å) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n < 1.1) and leakage currents of 5 × 10−8 A/cm2 at −10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2 × 10−8 A/cm2 at −10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2336 - 2342
Copyright
Copyright © Materials Research Society 1995

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References

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